ZXTP2013GTC datasheet(4/6 Pages) DIODES

номер детали	ZXTP2013GTC

подробное описание детали	100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN

PDF	6 Pages

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производитель	DIODES [Diodes Incorporated]

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4 / 6 page

ZXTP2013G

SEMICO NDUC TORS

ISSUE 1 - JUNE 2005

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT CONDITIONS

Collector-base breakdown voltage

BVCBO

-140

-160

IC=-100 A

Collector-emitter breakdown voltage

BVCER

-140

-160

IC=-1 A, RB 1k

Collector-emitter breakdown voltage

BVCEO

-100

-115

IC=-10mA*

Emitter-base breakdown voltage

BVEBO

-7

-8.1

IE=-100 A

Collector cut-off current

ICBO

-20

-0.5

VCB=-100V

CB=-100V,Tamb=100 C

Collector cut-off current

ICER

-20

-0.5

VCB=-100V

CB=-100V,Tamb=100 C

Emitter cut-off current

IEBO

-10

VEB=-6V

Collector-emitter saturation voltage

VCE(SAT)

-20

-70

-120

-240

-30

-90

-150

-340

IC=-0.1A, IB=-10mA*

C=-1A, IB=-100mA*

C=-2A, IB=-200mA*

C=-4A, IB=-400mA*

Base-emitter saturation voltage

VBE(SAT)

-985

-1100

IC=-4A, IB=-400mA*

Base-emitter turn-on voltage

VBE(ON)

-920

-1050

IC=-4A, VCE=-2V*

Static forward current transfer ratio

HFE

100

250

200

300

IC=-10mA, VCE=-1V*

C=-1A, VCE=-1V*

C=-3A, VCE=-1V*

C=-4A, VCE=-1V*

C=-10A, VCE=-1V*

Transition frequency

125

MHz IC=-100mA, VCE=-10V

f=50MHz

Output capacitance

COBO

VCB=-10V, f=1MHz*

Switching times

tON

tOFF

540

IC=-1A, VCC=-10V,

IB1=IB2=-100mA

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)

* Measured under pulsed conditions. Pulse width

300 s; duty cycle

2%.

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