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ZXTP2008Z датащи(PDF) 2 Page - Diodes Incorporated |
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ZXTP2008Z датащи(HTML) 2 Page - Diodes Incorporated |
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2 / 6 page ![]() ZXTP2008Z ISSUE 1 - JUNE 2005 2 PARAMETER SYMBOL LIMIT UNIT Collector-base voltage BVCBO -50 V Collector-emitter voltage BVCEO -30 V Emitter-base voltage BVEBO -7 V Continuous collector current (a) IC -5.5 A Peak pulse current ICM -20 A Power dissipation at TA =25°C (a) Linear derating factor PD 1.5 12 W mW/°C Power dissipation at TA =25°C (b) Linear derating factor PD 2.1 16.8 W mW/°C Operating and storage temperature range Tj,Tstg -55 to 150 °C ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R JA 83 °C/W Junction to Ambient (b) R JA 60 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. THERMAL RESISTANCE |
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