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ZXTN2040F датащи(PDF) 3 Page - Diodes Incorporated

номер детали ZXTN2040F
подробное описание детали  SOT23 40 volt NPN silicon planar medium power
PDF  5 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXTN2040F датащи(HTML) 3 Page - Diodes Incorporated

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ZXTN2040F
Issue 2 - August 2005
3
www.zetex.com
© Zetex Semiconductors plc 2005
Electrical characteristics (@TAMB = 25°C)
Parameter
Symbol
Min.
Max.
Unit
Conditions
Collector-base breakdown
voltage
V(BR)CBO
40
V
IC=100 A
Collector-emitter breakdown
voltage
V(BR)CEO
40
V
IC=10mA
*
NOTES:
* Measured under pulsed conditions. Pulse width=300 S. Duty cycle
2%
Spice parameter data is available upon request for this device
Emitter-base breakdown voltage
V(BR)EBO
5V
IE=100 A
Collector-emitter cut-off current
ICES
100
nA
VCE=30V
Collector-base cut-off current
ICBO
100
nA
VCB=30V
Emitter-base cut-off current
IEBO
100
nA
VEB=4V
Static forward current transfer
ratio
hFE
300
300
200
35
900
IC=1mA, VCE=5V
*
IC=500mA, VCE=5V
*
IC=1A, VCE=5V
*
IC=2A, VCE=5V
*
Collector-emitter saturation
voltage
VCE(sat)
0.2
0.3
0.5
V
V
V
IC=100mA, IB=1mA
*
IC=500mA, IB=50mA
*
IC=1A, IB=100mA
*
Base-emitter saturation voltage
VBE(sat)
1.1
V
IC=1A, IB=100mA
*
Base-emitter turn-on voltage
VBE(on)
1.0
V
IC=1A, VCE=5V
*
Transition frequency
fT
150
IC=50mA, VCE=10V
f=100MHz
Output capacitance
Cobo
10
pF
VCB=10V, f=1MHz



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