ZXTN2011Z datasheet(4/6 Pages) DIODES

номер детали	ZXTN2011Z

подробное описание детали	100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89

PDF	6 Pages

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производитель	DIODES [Diodes Incorporated]

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ZXTN2011Z

SEMICO NDUC TORS

ISSUE 2 - MAY 2006

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT CONDITIONS

Collector base breakdown voltage

BVCBO

200

235

IC = 100 A

Collector emitter breakdown voltage

BVCER

200

235

IC =1 A, RB

Collector emitter breakdown voltage

BVCEO

100

115

IC =10mA*

Emitter base breakdown voltage

BVEBO

8.1

IE =100 A

Collector cut-off current

ICBO

0.5

VCB = 150V

VCB = 150V, Tamb=100 C

Collector cut-off current

ICER

100

0.5

VCB = 150V

VCB = 150V, Tamb=100 C

Emitter cut-off current

IEBO

VEB =6V

Collector-emitter saturation voltage

VCE(SAT)

155

115

195

IC =0.1A, IB=5mA*

IC =1A, IB = 100mA*

IC =2A, IB = 100mA*

IC =5A, IB = 500mA*

Base emitter saturation voltage

VBE(SAT)

1000

1100

IC =5A, IB =500mA*

Base emitter turn on voltage

VBE(ON)

900

1000

IC =5A, VCE =2V*

Static forward current transfer ratio

hFE

100

230

200

300

IC = 10mA, VCE =2V*

IC =2A, VCE =2V*

IC =5A, VCE =2V*

IC = 10A, VCE =2V*

Transition frequency

130

MHz IC = 100mA, VCE =10V

f=50MHz

Output capacitance

COBO

VCB =10V,f=1MHz*

Switching times

tON

tOFF

1010

IC =1A, VCC = 10V,

IB1 =IB2 = 100mA

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)

* Measured under pulsed conditions. Pulse width

300 s; duty cycle

2%.

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