Issue 1 - December 2008

1

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© Diodes Incorporated, 2008

www.diodes.com

A Product Line of

Diodes Incorporated

ZXMS6004DG

60V N-channel self protected enhancement mode

Intellifet MOSFET

Summary

Continuous drain source voltage

60 V

On-state resistance

500 m

Ω

1.3 A

Clamping energy

490mJ

Description

The ZXMS6004DG is a self protected low side MOSFET with logic level

input. It integrates over-temperature, over-current, over-voltage (active

clamp) and ESD protected logic level functionality. The ZXMS6004DG is

ideal

as

a

general

purpose

switch

driven

from

3.3V

or

5V

microcontrollers in harsh environments where standard MOSFETs are

not rugged enough.

Features

•

Compact high power dissipation package

•

Low input current

•

Logic Level Input (3.3V and 5V)

•

Short circuit protection with auto restart

•

Over voltage protection (active clamp)

•

Thermal shutdown with auto restart

•

Over-current protection

•

Input Protection (ESD)

•

High continuous current rating

Ordering information

Device

Part mark

Reel size

(inches)

Tape width

(mm)

Quantity per reel

ZXMS66004DGTA

ZXMS

6004D

7

12 embossed

3,000 units

D

Top view

S

D

IN