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ZXMS6002G датащи(PDF) 4 Page - Diodes Incorporated

номер детали ZXMS6002G
подробное описание детали  60V N-Channel self protected enhancement mode
PDF  10 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXMS6002G датащи(HTML) 4 Page - Diodes Incorporated

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ZXMS6002G
Issue 3 - June 2007
4
www.zetex.com
© Zetex Semiconductors plc 2007
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight
copper.
(b) For a device surface mounted on FR4 board as (a) and measured at t<=10s.
Parameter
Symbol
Limit
Unit
Continuous drain-source voltage
VDS
60
V
Drain-source voltage for short circuit protection VIN=5V
VDS(SC)
36
V
Drain-source voltage for short circuit protection
VIN=10V
VDS(SC)
20
V
Continuous input voltage
VIN
-0.2 ... +10
V
Peak input voltage
VIN
-0.2 ... +20
V
Operating temperature range
Tj,
-40 to +150
°C
Storage temperature range
Tstg
-55 to +150
°C
Power dissipation @ Tamb =25°C(a)
PD
2.5
W
Continuous drain current @ VIN=10V; Tamb=25°C(a)
ID
1.6
A
Continuous drain current @ VIN=5V; Tamb=25°C(a)
ID
1.4
A
Continuous source current (body diode)(a)
IS
3A
Pulsed source current (body diode)(b)
IS
4.7
A
Unclamped single pulse inductive energy
EAS
550
mJ
Load dump protection
VLoadDump
80
V
Electrostatic discharge (human body model)
VESD
4000
V
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
40/150/56
Thermal resistance
Parameter
Symbol
Limit
Unit
Junction to ambient(a)
R JA
50
°C/W
Junction to ambient(b)
R JA
28
°C/W



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