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ZXMP2120G4TA датащи(PDF) 2 Page - Diodes Incorporated |
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ZXMP2120G4TA датащи(HTML) 2 Page - Diodes Incorporated |
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2 / 6 page ![]() ZXMP2120G4 ISSUE 2 - SEPTEMBER 2006 2 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -200 V Gate Source Voltage VGS 20 V Continuous Drain Current (VGS=10V; Tamb=25°C) (a) ID -200 mA Pulsed Drain Current (b) IDM -1 A Pulsed Source Current (Body Diode) (b) ISM -1 A Power Dissipation at Tamb=25°C (a) Linear derating factor Ptot 2.0 1.6 W mW/°C Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) RθJA 62.5 °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. |
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