ZXMP6A17E6

Document Number: DS33589 Rev. 2 - 2

4 of 8

www.diodes.com

December 2010

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A Product Line of

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ZXMP6A17E6

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-60

⎯

⎯

V

Zero Gate Voltage Drain Current

⎯

⎯

-1.0

μA

Gate-Source Leakage

⎯

⎯

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

-1.0

⎯

-3.0

V

Static Drain-Source On-Resistance (Note 7)

⎯

0.100

0.125

Ω

0.130

0.190

Forward Transconductance (Notes 7 & 8)

⎯

4.7

⎯

S

Diode Forward Voltage (Note 7)

⎯

-0.85

-0.95

V

Reverse recovery time (Note 8)

25.1

⎯

ns

Reverse recovery charge (Note 8)

⎯

27.2

⎯

nC

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

⎯

637

⎯

pF

f = 1MHz

Output Capacitance

⎯

70

⎯

pF

Reverse Transfer Capacitance

⎯

53

⎯

pF

Total Gate Charge (Note 9)

⎯

9.8

⎯

nC

Total Gate Charge (Note 9)

⎯

17.7

⎯

nC

Gate-Source Charge (Note 9)

⎯

1.6

⎯

nC

Gate-Drain Charge (Note 9)

⎯

4.4

⎯

nC

Turn-On Delay Time (Note 9)

⎯

2.6

⎯

ns

Turn-On Rise Time (Note 9)

⎯

3.4

⎯

ns

Turn-Off Delay Time (Note 9)

⎯

26.2

⎯

ns

Turn-Off Fall Time (Note 9)

⎯

11.3

⎯

ns

Notes:

7. Measured under pulsed conditions. Pulse width

≤ 300μs; duty cycle ≤ 2%

8. For design aid only, not subject to production testing.

9. Switching characteristics are independent of operating junction temperatures.