ZXMP3F37N8 datasheet(2/8 Pages) DIODES

номер детали	ZXMP3F37N8

подробное описание детали	30V SO8 P-channel enhancement mode MOSFET

PDF	8 Pages

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производитель	DIODES [Diodes Incorporated]

домашняя страница	http://www.diodes.com

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ZXMP3F37N8

Absolute maximum ratings

Parameter

Symbol

Limit

Unit

Drain-Source voltage

VDSS

-30

Gate-Source voltage

VGS

±20

Continuous Drain current @ VGS= -10V; TA=25°C

(b)

@ VGS= -10V; TA=70°C

(b)

@ VGS= -10V; TA=25°C

(a)

@ VGS= -10V; TL=25°C

(d)

-8.5

-6.8

-6.4

-10.7

Pulsed Drain current

(c)

IDM

-39.5

Continuous Source current (Body diode)

(b)

-4.4

Pulsed Source current (Body diode)

(c)

ISM

-39.5

Power dissipation at TA =25°C

(a)

Linear derating factor

1.56

12.5

mW/

°C

Power dissipation at TA =25°C

(b)

Linear derating factor

2.8

22.2

mW/

°C

Power dissipation at TL =25°C

(d)

Linear derating factor

4.4

35.4

mW/

°C

Operating and storage temperature range

Tj, Tstg

-55 to 150

°C

Thermal resistance

Parameter

Symbol

Value

Unit

Junction to ambient

(a)

RθJA

°C/W

Junction to ambient

(b)

RθJA

°C/W

Junction to lead

(d)

RθJL

28.26

°C/W

NOTES:

(a)

For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still

air conditions.

(b)

Mounted on FR4 PCB measured at t

≤ 10 sec.

(c)

Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction

temperature.

(d)

Thermal resistance from junction to solder-point (at the end of the drain lead).

Issue 1 - August 2008

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