ZXMC6A09DN8

ISSUE 4 - MAY 2005

2

PARAMETER

SYMBOL

VALUE

UNIT

Junction to Ambient

(a)(d)

100

°C/W

Junction to Ambient

(b)(e)

69

°C/W

Junction to Ambient

(b)(d)

58

°C/W

THERMAL RESISTANCE

Notes:

(a) For a dual device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper in still air conditions.

(b) For a dual device surface mounted on FR4 PCB measured at t

10 sec.

(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02, pulse width=300µs - pulse width limited by maximum junction temperature.

(d) For a dual device with one active die.

(e) For a device with two active die running at equal power.

PARAMETER

SYMBOL

N-Channe

l

P-Channel

UNIT

Drain-Source Voltage

60

-60

V

Gate-Source Voltage

20

20

V

(b)(d)

(b)(d)

(a)(d)

5.1

4.1

3.9

-4.8

-3.8

-3.7

A

A

Pulsed Drain Current

(c)

25

-23

A

Continuous Source Current (Body Diode)

(b)

3.5

-3.3

A

Pulsed Source Current (Body Diode)

(c)

25.4

-23.8

A

(a)(d)

Linear Derating Factor

1.25

10

W

mW/°C

(a)(e)

Linear Derating Factor

1.8

14

W

mW/°C

(b)(d)

Linear Derating Factor

2.1

17

W

mW/°C

Operating and Storage Temperature Range

-55 to +150

°C

ABSOLUTE MAXIMUM RATINGS