ZXMC3F31DN8

Absolute maximum ratings

Parameter

Symbol

N-

channel

Q1

P-

channel

Q2

Unit

Drain-Source voltage

30

-30

V

Gate-Source voltage

±20

±20

V

(b)(d)

(b)(d)

(a)(d)

(a)(e)

(f)(d)

7.3

5.9

5.7

6.8

7.8

5.3

4.3

4.1

4.9

5.7

A

Pulsed Drain current

(c)

33

23

A

Continuous Source current (Body diode)

(b)(d)

3.5

3.2

A

Pulsed Source current (Body diode)

(c)(d)

33

23

A

(a)(d)

Linear derating factor

1.25

10

W

mW/

°C

(a)(e)

Linear derating factor

1.8

14

W

mW/

°C

(b)(d)

Linear derating factor

2.1

17

W

mW/

°C

(f) (d)

Linear derating factor

2.35

19

W

mW/

°C

Operating and storage temperature range

-55 to 150

°C

Thermal resistance

Parameter

Symbol

Value

Unit

Junction to ambient

(a)(d)

100

°C/W

Junction to ambient

(a)(e)

70

°C/W

Junction to ambient

(b)(d)

60

°C/W

Junction to lead

(f) (d)

53

°C/W

NOTES:

(a)

For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still

air conditions.

(b)

Mounted on FR4 PCB measured at t

≤ 10 sec.

(c)

Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction

temperature.

(d)

For a device with one active die.

(e)

For a device with two active die running at equal power.

(f)

Thermal resistance from junction to solder-point (at the end of the drain lead).

Issue 1 - September 2008

2

© Diodes Incorporated 2008

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