ZXMC3AMC

Document number: DS35088 Rev. 1 - 2

7 of 11

www.diodes.com

December 2010

© Diodes Incorporated

ZXMC3AMC

A Product Line of

Diodes Incorporated

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-30

-

-

V

Zero Gate Voltage Drain Current

-

-

-0.5

μA

Gate-Source Leakage

-

-

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

-1.0

-

-3.0

V

Static Drain-Source On-Resistance (Note 13)

-

0.150

0.210

Ω

0.280

0.330

Forward Transconductance (Note 13 & 14)

-

2.48

-

S

Diode Forward Voltage (Note 13)

-

-0.85

-0.95

V

Reverse Recover Time (Note 14)

-

18.6

-

ns

Reverse Recover Charge (Note 14)

-

14.8

-

nC

DYNAMIC CHARACTERISTICS (Note 14)

Input Capacitance

-

206

-

pF

f = 1.0MHz

Output Capacitance

-

59.3

-

pF

Reverse Transfer Capacitance

-

49.2

-

pF

Total Gate Charge (Note 15)

-

3.8

-

nC

Total Gate Charge (Note 15)

-

6.4

-

nC

Gate-Source Charge (Note 15)

-

0.69

-

nC

Gate-Drain Charge (Note 15)

-

2.0

-

nC

Turn-On Delay Time (Note 15)

-

1.5

-

ns

Turn-On Rise Time (Note 15)

-

2.8

-

ns

Turn-Off Delay Time (Note 15)

-

11.3

-

ns

Turn-Off Fall Time (Note 15)

-

7.5

-

ns

Notes:

13. Measured under pulsed conditions. Width

≤ 300µs. Duty cycle ≤ 2%.

14. For design aid only, not subject to production testing.

15. Switching characteristics are independent of operating junction temperature.