BCR12CS-12LB datasheet(2/9 Pages) RENESAS

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BCR12CS-12LB

Preliminary

R07DS0225EJ0400 Rev.4.00

Page 2 of 8

Dec 14, 2010

Electrical Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test conditions

Repetitive peak off-state current

IDRM

—

2.0

Tj = 150

C, V

DRM applied

On-state voltage

VTM

—

1.6

Tc = 25

C, I

TM = 20 A,

Instantaneous measurement



VFGT

—

1.5



VRGT

—

1.5

Gate trigger voltage

Note2



VRGT

—

1.5

Tj = 25

C, V

D = 6 V, RL = 6 ,

RG = 330 



IFGT

—

Note6



IRGT

—

Note6

Gate trigger current

Note2



IRGT

—

Note6

Tj = 25

C, V

D = 6 V, RL = 6 ,

RG = 330 

Gate non-trigger voltage

VGD

0.2/0.1

—

Tj = 125

C/150C, V

D = 1/2 VDRM

Thermal resistance

Rth (j-c)

—

1.8

C/W

Junction to case

Note3 Note4

Critical-rate of rise of off-state

commutating voltage

Note5

(dv/dt)c

10/1

—

s

Tj = 125

C/150C

Notes: 2. Measurement using the gate trigger characteristics measurement circuit.

3. Case temperature is measured on the T2 tab.

4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.

5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.

6. High sensitivity (IGT  20 mA) is also available. (IGT item: 1)

Test conditions

Commutating voltage and current waveforms

(inductive load)

1. Junction temperature

Tj = 125

C/150C

2. Rate of decay of on-state commutating current

(di/dt)c = – 6.0 A/ms

3. Peak off-state voltage

VD = 400 V

Supply Voltage

Time

Main Current

Main Voltage

(di/dt)c

(dv/dt)c

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