R8C datasheet(80/106 Pages) RENESAS

80 / 106 page

R01DS0011EJ0100 Rev.1.00

Page 80 of 102

Dec 21, 2010

R8C/LA3A Group, R8C/LA5A Group, R8C/LA6A Group, R8C/LA8A Group

5. Electrical Characteristics

Note:

When the digital filter is disabled.

Notes:

Definition of programming/erasure endurance

The programming and erasure endurance is defined on a per-block basis.

If the programming and erasure endurance is n (n = 1,000), each block can be erased n times. For example, if 1,024 1-byte

writes are performed to different addresses in block A, a 1 Kbyte block, and then the block is erased, the

programming/erasure endurance still stands at one.

However, the same address must not be programmed more than once per erase operation (overwriting prohibited).

Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).

In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential

addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,

when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups

before erasing them all in one operation. It is also advisable to retain data on the erasure endurance of each block and limit

the number of erase operations to a certain number.

If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase

command at least three times until the erase error does not occur.

Customers desiring program/erase failure rate information should contact their Renesas technical support representative.

The data hold time includes time that the power supply is off or the clock is not supplied.

Table 5.34

Gain Amplifier Characteristics

(VSS = 0 V and Topr =

−20 to 85 °C (N version)/−40 to 85 °C (D version), unless

otherwise specified.)

Symbol

Parameter

Conditions

Standard

Unit

Min.

Typ.

Max.

VGAIN

Gain amplifier operating range

0.4

–

AVCC – 1.0

φAD

A/D conversion clock

–

MHz

Table 5.35

Comparator B Characteristics

(VCC = 1.8 to 5.5 V and Topr =

−20 to 85°C (N version)/ −40 to 85°C (D version), unless

otherwise specified.)

Symbol

Parameter

Condition

Standard

Unit

Min.

Typ.

Max.

Vref

IVREF1, IVREF3 input reference voltage

–

VCC

− 1.4

IVCMP1, IVCMP3 input voltage

-0.3

–

VCC

+ 0.3

−

Offset

–

100

Comparator output delay time (1)

VI = Vref ± 100 mV

–

µs

ICMP

Comparator operating current

VCC = 5.0 V

–

µA

Table 5.36

Flash Memory (Program ROM) Characteristics

(VCC = 1.8 to 5.5 V and Topr = 0 to 60

°C, unless otherwise specified.)

Symbol

Parameter

Conditions

Standard

Unit

Min.

Typ.

Max.

–

Program/erase endurance (1)

10,000 (2)

––

times

–

Byte program time

–

µs

–

Block erase time

–

0.12

–

td(SR-SUS)

Time delay from suspend request

until suspend

–

0.25 + CPU clock

× 3 cycles

–

Time from suspend until erase

restart

–

30 + CPU clock

× 1 cycle

µs

td(CMDRST-READY)

Time from when command is forcibly

terminated until reading is enabled

–

30 + CPU clock

× 1 cycle

µs

–

Program, erase voltage

1.8

–

5.5

–

Read voltage

1.8

–

5.5

–

Program, erase temperature

–

°C

–

Data hold time (6)

Ambient temperature = 85

°C

–

year

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