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ZNBG2000 датащи(PDF) 2 Page - Diodes Incorporated

номер детали ZNBG2000
подробное описание детали  FET BIAS CONTROLLER
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZNBG2000 датащи(HTML) 2 Page - Diodes Incorporated

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ISSUE 1 - AUGUST 2001
ZNBG2000
ZNBG2001
2
ABSOLUTE MAXIMUM RATINGS
Supply Voltage
-0.6V to 15V
Supply Current
100mA
Drain Current (per FET)
0 to 15mA
(set by RCAL1 and RCAL2)
Output Current
100mA
Operating Temperature
-40 to 80°C
Storage Temperature
-40 to 85°C
Power Dissipation (Tamb 25 C)
MSOP10
500mW
SYMBOL PARAMETER
CONDITIONS
LIMITS
UNITS
Min
Typ
Max
V
CC
Supply Voltage
5
12
V
I
CC
Supply Current
I
D1 and ID2=0
I
D1 and ID2=10mA
5
24
10
30
mA
mA
V
SUB
Substrate Voltage
(Internally generated)
I
SUB=0
I
SUB= -200µA
-3.5
-2.8
-2
-2
V
V
E
ND
E
NG
Output Noise
Drain Voltage
Gate Voltage
C
G=4.7nF, CD=10nF
C
G=4.7nF, CD=10nF
0.02
0.005
Vpkpk
Vpkpk
fO
Oscillator Freq.
150
330
800
kHz
DRAIN CHARACTERISTICS
I
DO
Output Current Range
Set by R
CAL1
015
mA
I
D
Current
8
10
12
mA
Current Change
I
DV
with V
CC
V
CC=5 to 12V
0.5
%/V
I
DT
with T
j
T
j=-40 to +80°C
0.05
%/°C
V
D
Voltage
ZNBG2000
ZNBG2001
I
D1 and ID2=10mA
2
1.8
2.2
2
2.4
2.2
V
V
Voltage Change
V
DV
with V
CC
V
CC= 5 to 12V
0.5
%/V
V
DT
with T
j
T
j = -40 to +80°C
50
ppm
GATE CHARACTERISTICS
I
GO
Output Current Range
-40
2000
µA
Output Voltage
V
OL
Output Low
I
D1 and ID2=12mA
IG1 and IG2=0
-3.5
-2
V
I
D1 and ID2=12mA
I
G1 and IG2= -10µA
-3.5
-2
V
V
OH
Output High
I
D1 and ID2= 8mA
I
G1 and IG2= 0
0.4
1
V
Notes:
1. The negative bias voltages specified are generated on-chip using an internal oscillator. Two external capacitors, CNB and CSUB, of 47nF are required for this
purpose.
2. The characteristics are measured using an external reference resistors RCAL1 of value 16k
Ω wired from pin RCAL1 to ground.
3. Noise voltage is not measured in production.
4. Noise voltage measurement is made with FETs and gate and drain capacitors in place on all outputs. CG, 4.7nF, are connected between gate outputs and
ELECTRICAL CHARACTERISTICS TEST CONDITIONS (Unless otherwise



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