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ZNBG2000 датащи(PDF) 2 Page - Diodes Incorporated |
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ZNBG2000 датащи(HTML) 2 Page - Diodes Incorporated |
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2 / 7 page ![]() ISSUE 1 - AUGUST 2001 ZNBG2000 ZNBG2001 2 ABSOLUTE MAXIMUM RATINGS Supply Voltage -0.6V to 15V Supply Current 100mA Drain Current (per FET) 0 to 15mA (set by RCAL1 and RCAL2) Output Current 100mA Operating Temperature -40 to 80°C Storage Temperature -40 to 85°C Power Dissipation (Tamb 25 C) MSOP10 500mW SYMBOL PARAMETER CONDITIONS LIMITS UNITS Min Typ Max V CC Supply Voltage 5 12 V I CC Supply Current I D1 and ID2=0 I D1 and ID2=10mA 5 24 10 30 mA mA V SUB Substrate Voltage (Internally generated) I SUB=0 I SUB= -200µA -3.5 -2.8 -2 -2 V V E ND E NG Output Noise Drain Voltage Gate Voltage C G=4.7nF, CD=10nF C G=4.7nF, CD=10nF 0.02 0.005 Vpkpk Vpkpk fO Oscillator Freq. 150 330 800 kHz DRAIN CHARACTERISTICS I DO Output Current Range Set by R CAL1 015 mA I D Current 8 10 12 mA Current Change I DV with V CC V CC=5 to 12V 0.5 %/V I DT with T j T j=-40 to +80°C 0.05 %/°C V D Voltage ZNBG2000 ZNBG2001 I D1 and ID2=10mA 2 1.8 2.2 2 2.4 2.2 V V Voltage Change V DV with V CC V CC= 5 to 12V 0.5 %/V V DT with T j T j = -40 to +80°C 50 ppm GATE CHARACTERISTICS I GO Output Current Range -40 2000 µA Output Voltage V OL Output Low I D1 and ID2=12mA IG1 and IG2=0 -3.5 -2 V I D1 and ID2=12mA I G1 and IG2= -10µA -3.5 -2 V V OH Output High I D1 and ID2= 8mA I G1 and IG2= 0 0.4 1 V Notes: 1. The negative bias voltages specified are generated on-chip using an internal oscillator. Two external capacitors, CNB and CSUB, of 47nF are required for this purpose. 2. The characteristics are measured using an external reference resistors RCAL1 of value 16k Ω wired from pin RCAL1 to ground. 3. Noise voltage is not measured in production. 4. Noise voltage measurement is made with FETs and gate and drain capacitors in place on all outputs. CG, 4.7nF, are connected between gate outputs and ELECTRICAL CHARACTERISTICS TEST CONDITIONS (Unless otherwise |
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