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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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FZT751 датащи(PDF) 2 Page - Diodes Incorporated |
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FZT751 датащи(HTML) 2 Page - Diodes Incorporated |
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2 / 5 page  FZT751 Document Number DS32208 Rev. 3 - 2 2 of 5 www.diodes.com June 2010 © Diodes Incorporated A Product Line of Diodes Incorporated FZT751 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current IC -3 A Peak Pulse Current ICM -6 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation at TA = 25°C PD 2 W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -80 − − V IC = -100µA Collector-Emitter Breakdown Voltage (Note 2) V(BR)CEO -60 − − V IC = -10mA Emitter-Base Breakdown Voltage V(BR)EBO -5 − − V IE = 100µA Collector Cut-off Current ICBO − − − − -0.1 -10 µA µA VCB = -60V VCB = -60V, Tamb = 100°C Emitter Cut-off Current IEBO − − -0.1 µA VEB = -4V Collector-Emitter Saturation Voltage (Note 2) VCE(SAT) − − -0.15 -0.45 0.3 0.6 V IC = -1A, IB = -100mA IC = -3A, IB = -300mA Base-Emitter Saturation Voltage (Note 2) VCE(SAT) − -0.9 -1.25 V IC = -1A, IB = -100mA Base-Emitter Turn-On Voltage (Note 2) VBE(ON) − -0.8 -1.0 mV IC = -1A, VCE = -2V DC Current Gain (Note 2) hFE 70 100 80 40 200 200 170 150 − 300 − − IC = -50mA, VCE = -2V IC = -500mA, VCE = -2V IC = -1A, VCE = -2V IC = -2A, VCE = -2V Current Gain-Bandwidth Product (Note 2) fT 100 140 − MHz VCE = -5V, IC = -100mA f = 100MHz Turn-On Time ton − 40 − nA VCC = -10V, IC = -500mA IB1 = IB2 = -50mA Turn-Off Time toff − 450 − nA Output Capacitance (Note 2) Cobo − − 30 pF VCB = -10V. f = 1MHz Notes: 2. Measured under pulsed conditions. Pulse width = 300 µs. Duty cycle ≤ 2% |
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