FMMTA56 datasheet(1/1 Pages) DIODES

номер детали	FMMTA56

подробное описание детали	SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

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SOT23 PNP SILICON PLANAR

MEDIUM POWER TRANSISTORS

ISSUE 4 – MARCH 2001

✪

FEATURES

*

Gain of 50 at I

C=100mA

PARTMARKING DETAIL -

FMMTA56 - 2G

FMMTA56R - MB

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

FMMTA56

UNIT

Collector-Base Voltage

VCBO

-80

V

Collector-Emitter Voltage

VCEO

-80

V

Emitter-Base Voltage

VEBO

-4

V

Continuous Collector Current

IC

-500

mA

Power Dissipation at Tamb=25°C

Ptot

330

mW

Operating and Storage Temperature

Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).

FMMTA56

PARAMETER

SYMBOL

MIN.

MAX.

UNIT

CONDITIONS.

Collector-Emitter Breakdown

Voltage

V(BR)CEO

-80

V

IC=-1mA, IB=0*

Emitter-Base Breakdown

Voltage

V(BR)EBO

-4

V

IE=-100µA, IC=0

Collector-Emitter Cut-Off

Current

ICES

-0.1

µA

VCE=-60V

Collector-Base Cut-Off Current

ICBO

-0.1

µA

VCB=-80V, IE=0

VCB=-60V, IE=0

Static Forward Current Transfer

Ratio

hFE

50

IC=-10mA, VCE=1V*

IC=-100mA, VCE=1V*

Collector-Emitter Saturation

Voltage

VCE(sat)

-0.25

V

IC=-100mA, IB=-10mA*

Base-Emitter

Turn-On Voltage

VBE(on)

-1.2

V

IC=-100mA, VCE=-1V*

Transition

Frequency

fT

100

MHz

IC=-10mA, VCE=-2V

f=100MHz

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤2%

FMMTA56

C

B

E

SOT23

TBA

Аналогичный номер детали - FMMTA56

производитель	номер детали	датащи	подробное описание детали
Zetex Semiconductors	FMMTA56	37Kb / 1P	PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
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	FMMTA56R	57Kb / 1P	SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
	FMMTA56R-MB	57Kb / 1P	SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

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Аналогичное описание - FMMTA56

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Fairchild Semiconductor	FMMT551TA	108Kb / 2P	SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
Diodes Incorporated	FMMTA56	47Kb / 1P	SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS MARCH 2001

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