 |
поискавой системы для электроныых деталей |
|
|
поискавой системы для электроныых деталей |
|
FMMT560 датащи(PDF) 1 Page - Diodes Incorporated |
|
|
|||||||||||||||||||||||||||||
FMMT560 датащи(HTML) 1 Page - Diodes Incorporated |
|
|
1 / 4 page  FMMT560 Document Revision: 3 1 of 4 www.diodes.com May 2009 © Diodes Incorporated FMMT560 A Product Line of Diodes Incorporated PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR Features • Excellent hFE Characteristics up to IC = 50mA • Low Saturation Voltages • Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) • "Green" Device (Note 2) Mechanical Data • Case: SOT-23 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals: Matte Tin Finish annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.008 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -500 V Collector-Emitter Voltage VCEO -500 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current IC -150 mA Peak Pulse Current ICM -500 mA Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation PD 500 mW Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Breakdown Voltage V(BR)CBO -500 ⎯ ⎯ V IC = -100μA Collector-Emitter Breakdown Voltage (Note 3) V(BR)CEO -500 ⎯ ⎯ V IC = -10mA Emitter-Base Breakdown Voltage V(BR)EBO -5 ⎯ ⎯ V IE = 100μA Collector Cutoff Current ICBO; ICES ⎯ ⎯ -100 nA VCB = -500V, VCE = -500V Emitter Cutoff Current IEBO ⎯ ⎯ -100 nA VEB = -5V ON CHARACTERISTICS (Note 3) DC Current Gain hFE 100 80 ⎯ ⎯ ⎯ 15 300 300 ⎯ ⎯ IC = -1mA, VCE = -10V IC = -50mA, VCE = -10V IC = -100mA, VCE = -10V Collector-Emitter Saturation Voltage VCE(SAT) ⎯ ⎯ -0.2 -0.5 V IC = -20mA, IB = -2mA IC = -50mA, IB = -10mA Base-Emitter Turn-On Voltage VBE(ON) ⎯ ⎯ -0.9 V IC = -50mA, VCE = -10V Base-Emitter Saturation Voltage VBE(SAT) ⎯ ⎯ -0.9 V IC = -50mA, IB = -10mA SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo ⎯ ⎯ 8 pF VCB = -20V, f = 1MHz Current Gain-Bandwidth Product fT 60 ⎯ ⎯ MHz VCE = -20V, IC = -10mA, f = 50MHz SWITCHING CHARACTERISTICS Turn-On Time ton ⎯ 110 ⎯ ns VCE = -100V, IC = -50mA, IB1 = -5mA, IB2 = 10mA Turn-Off Time toff ⎯ 1.5 ⎯ μs Notes: 1. No purposefully added lead. Halogen and Antimony Free. 2. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤2% Top View E B C Pin Configuration C E B |
Аналогичный номер детали - FMMT560 |
|
Аналогичное описание - FMMT560 |
|
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
