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FMMT551 датащи(PDF) 2 Page - Diodes Incorporated

номер детали FMMT551
подробное описание детали  SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
PDF  2 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

FMMT551 датащи(HTML) 2 Page - Diodes Incorporated

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SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* 60 Volt VCEO
* 1 Amp continuous current
COMPLEMENTARY TYPE –
FMMT451
PARTMARKING DETAIL –
551
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-80
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-2
A
Continuous Collector Current
IC
-1
A
Base Current
IB
-200
mA
Power Dissipation at Tamb=25°C
Ptot
500
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C).
PARAMETER
SYMBOL MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
-80
V
IC=-100µA
Collector-Emitter
Sustaining Voltage
VCEO(sus) -60
V
IC=-10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
-5
V
IE=-100µA
Collector Cut-Off Current ICBO
-0.1
µ
A
VCB=-60V
Emitter Cut-Off Current
IEBO
-0.1
µ
A
VEB=-4V
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.35
V
IC=-150mA, IB=-15mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-1.1
V
IC=-150mA, IB=-15mA*
Static Forward Current
Transfer Ratio
hFE
50
10
150
IC=-150mA, VCE=-10V*
IC=-1A, VCE=-10V*
Transition
Frequency
fT
150
MHz
IC=-50mA, VCE=-10V
f=100MHz
Output Capacitance
Cobo
25
pF
VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
FMMT551
C
B
E
3 - 130
3 - 129
FMMT551
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I+ -
Collector Current (Amps)
I+ -
Collector Current (Amps)
VBE(on) v IC
-0.6
-0.01
-10
-0.1
-1
-0.7
-0.8
-0.9
-1.0
0
-0.01
-0.1
-10
-1
-0.2
-0.4
-0.6
-0.8
I+/I*=10
I+ -
Collector Current (Amps)
hFE v IC
-0.001
-0.01
-10
-0.1
-1
20
40
60
80
100
I+ -
Collector Current (Amps)
-0.8
-1.0
-1.2
-1.4
-0.01
-0.1
-1
-10
-0.6
VBE(sat) v IC
1
0.1
Safe Operating Area
VCE - Collector Emitter Voltage (V)
10V
100V
1s
DC
100ms
10ms
100µs
1ms
1V
0.01
0.1V
10



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