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FMMT497 датащи(PDF) 2 Page - Diodes Incorporated

номер детали FMMT497
подробное описание детали  SOT23 NPN silicon planar high voltage high
PDF  6 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

FMMT497 датащи(HTML) 2 Page - Diodes Incorporated

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FMMT497
Issue 4 - November 2006
2
www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max
.
Unit
Conditions
Collector-base
breakdown voltage
V(BR)CBO
300
V
IC = 100 A
Collector-emitter
breakdown voltage
VCEO(sus)
300
V
IC = 10mA (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300 s. Duty cycle
2%.
Emitter-base
breakdown voltage
V(BR)EBO
5V
IE = 100 A
Collector cut-off current
ICBO
100
nA
VCB = 250V
Collector cut-off current
ICES
100
nA
VCES = 250V
Emitter cut-off current
IEBO
100
nA
VEB = 4V
Collector-emitter
saturation voltage
VCE(sat)
0.2
0.3
V
V
IC = 100mA, IB = 10mA
IC = 250mA, IB = 25mA
Base-emitter
saturation voltage
VBE(sat)
1.0
V
IC = 250mA, IB = 25mA
Base-emitter
turn on voltage
VBE(on)
1.0
V
IC = 250mA, VCE = 10V
Static forward current
transfer ratio
hFE
100
80
20
300
IC = 1mA, VCE = 10V
IC = 100mA, VCE = 10V(*)
IC = 250mA, VCE = 10V(*)
Transition frequency
fT
75
MHz
IC = 50mA, VCE = 10V
f = 100MHz
output capacitance
Cobo
5pF
VCB = 10V, f = 1MHz
Switching performance
td
53
ns
VCC = 100V, IC = 100mA,
Ib1 = -Ib2 = 10mA
tr
126
ns
ts
2.58
s
tf
228
ns



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