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FMMT497 датащи(PDF) 2 Page - Diodes Incorporated |
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FMMT497 датащи(HTML) 2 Page - Diodes Incorporated |
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2 / 6 page ![]() FMMT497 Issue 4 - November 2006 2 www.zetex.com © Zetex Semiconductors plc 2006 Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max . Unit Conditions Collector-base breakdown voltage V(BR)CBO 300 V IC = 100 A Collector-emitter breakdown voltage VCEO(sus) 300 V IC = 10mA (*) NOTES: (*) Measured under pulsed conditions. Pulse width = 300 s. Duty cycle 2%. Emitter-base breakdown voltage V(BR)EBO 5V IE = 100 A Collector cut-off current ICBO 100 nA VCB = 250V Collector cut-off current ICES 100 nA VCES = 250V Emitter cut-off current IEBO 100 nA VEB = 4V Collector-emitter saturation voltage VCE(sat) 0.2 0.3 V V IC = 100mA, IB = 10mA IC = 250mA, IB = 25mA Base-emitter saturation voltage VBE(sat) 1.0 V IC = 250mA, IB = 25mA Base-emitter turn on voltage VBE(on) 1.0 V IC = 250mA, VCE = 10V Static forward current transfer ratio hFE 100 80 20 300 IC = 1mA, VCE = 10V IC = 100mA, VCE = 10V(*) IC = 250mA, VCE = 10V(*) Transition frequency fT 75 MHz IC = 50mA, VCE = 10V f = 100MHz output capacitance Cobo 5pF VCB = 10V, f = 1MHz Switching performance td 53 ns VCC = 100V, IC = 100mA, Ib1 = -Ib2 = 10mA tr 126 ns ts 2.58 s tf 228 ns |
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