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FCX690B датащи(PDF) 2 Page - Diodes Incorporated

номер детали FCX690B
подробное описание детали  SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR
PDF  3 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

FCX690B датащи(HTML) 2 Page - Diodes Incorporated

  FCX690B Datasheet HTML 1Page - Diodes Incorporated FCX690B Datasheet HTML 2Page - Diodes Incorporated FCX690B Datasheet HTML 3Page - Diodes Incorporated  
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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
SYMBOL
Min
Typ
Max
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
45
V
IC=100A
Collector-Emitter
Breakdown Voltage
V(BR)CEO
45
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
5V
IE=100A
Collector Cut-Off Current
ICBO
0.1
A
VCB=35V
Emitter Cut-Off Current
IEBO
0.1
A
VEB=4V
Collector-Emitter
Saturation Voltage
VCE(sat)
80
300
mV
mV
IC=0.1A, IB=0.5mA *
IC=1A, IB=5mA *
Base-Emitter
Saturation Voltage
VBE(sat)
0.9
V
IC=1A, IB=10mA *
Base-Emitter
Turn-On Voltage
VBE(on)
0.85
V
IC=1A, VCE=2V *
Static Forward Current
Transfer
Ratio
hFE
500
400
150
IC=100mA, VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
Transition Frequency
fT
150
MHz
IC=50mA, VCE=5V
f=50MHz
Input Capacitance
Cibo
200
pF
VEB=0.5V, f=1MHz
Output Capacitance
Cobo
16
pF
VCB=10V, f=1MHz
Switching Times
ton
toff
33
1300
ns
ns
IC=500mA, IB1=IB2=50mA
VCC=10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle 2%
FCX690B



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