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FCX688B датащи(PDF) 2 Page - Diodes Incorporated

номер детали FCX688B
подробное описание детали  SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR
PDF  3 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

FCX688B датащи(HTML) 2 Page - Diodes Incorporated

  FCX688B Datasheet HTML 1Page - Diodes Incorporated FCX688B Datasheet HTML 2Page - Diodes Incorporated FCX688B Datasheet HTML 3Page - Diodes Incorporated  
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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
SYMBOL
Min
Typ
Max
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
12
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
12
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
5V
IE=100µA
Collector Cut-Off Current
ICBO
0.1
µA
VCB=9V
Emitter Cut-Off Current
IEBO
0.1
µA
VEB=4V
Collector-Emitter
Saturation Voltage
VCE(sat)
40
60
180
350
400
mV
mV
mV
mV
mV
IC=0.1A, IB=1mA *
IC=0.1A, IB=0.5mA *
IC=1A, IB=10mA *
IC=3A, IB=10mA *
IC=4A, IB=50mA *
Base-Emitter
Saturation Voltage
VBE(sat)
1.1
V
I
C=3A, IB=20mA *
Base-Emitter
Turn-On Voltage
VBE(on)
1.0
V
IC=3A, VCE=2V *
Static Forward Current
Transfer
Ratio
hFE
500
400
100
IC=100mA, VCE=2V*
IC=3A, VCE=2V*
IC=10A, VCE=2V*
Transition Frequency
fT
150
MHz
IC=50mA, VCE=5V
f=50MHz
Input Capacitance
Cibo
200
pF
VEB=0.5V, f=1MHz
Output Capacitance
Cobo
40
pF
VCB=10V, f=1MHz
Switching Times
ton
toff
40
500
ns
ns
IC=500mA, IB1=IB2=50mA
VCC=10V
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
FCX688B



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