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FCX593 датащи(PDF) 2 Page - Diodes Incorporated

номер детали FCX593
подробное описание детали  SOT89 Silicon planar high voltage transistor
PDF  6 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

FCX593 датащи(HTML) 2 Page - Diodes Incorporated

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FCX593
Issue 4 - November 2006
2
www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Max.
Unit
Conditions
Base breakdown voltages
V(BR)CBO
-120
V
IC = -100 A
V(BR)CEO
-100
V
IC = -10mA (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300 s. Duty cycle
2%.
V(BR)EBO
-5
V
IE = -100 A
Cut-off currents
ICBO
-100
nA
VCB = -100V
IEBO
-100
nA
VEB = -4V
ICES
-100
nA
VCES = -100V
Saturation voltages
VCE(sat)
-0.2
V
IC = -250mA, IB = -25mA(*)
-0.3
V
IC = -250mA, IB = -25mA(*)
VBE(sat)
-1.1
V
IC = -500mA, IB = -50mA(*)
Base-emitter turn-on voltage
VBE(on)
-1
V
IC = -1mA, IB = -5V(*)
Static forward current
transfer ratio
hFE
100
IC = -1mA, VCE = -5V
100
IC = -250mA, VCE = -5V(*)
100
300
IC = -500mA, VCE = -5V(*)
50
IC = -1A, VCE = -5V(*)
Transition frequency
fT
50
MHz
IC = -50mA, VCE = -10V
f = 100MHz
Output capacitance
COBO
5pF
VCB = -10V, f = 1MHz



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