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DMB53D0UDW датащи(PDF) 1 Page - Diodes Incorporated

номер детали DMB53D0UDW
подробное описание детали  N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMB53D0UDW датащи(HTML) 1 Page - Diodes Incorporated

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DMB53D0UDW
Document number: DS31675 Rev. 5 - 2
1 of 7
www.diodes.com
December 2009
© Diodes Incorporated
DMB53D0UDW
N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR
Features
•
N-Channel MOSFET and NPN Transistor in One Package
•
Low On-Resistance
•
Very Low Gate Threshold Voltage, 1.0V max
•
Low Input Capacitance
•
Fast Switching Speed
•
Low Input/Output Leakage
•
Ultra-Small Surface Mount Package
•
Lead, Halogen and Antimony Free, RoHS Compliant (Note 2)
•
ESD Protected MOSFET Gate up to 2kV
•
"Green" Device (Note 3)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
Case: SOT-363
•
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminal Connections: See Diagram
•
Terminals: Finish - Matte Tin annealed over Alloy 42 Lead frame.
Solderable per MIL-STD-202, Method 208
•
Marking Information: See Page 5
•
Ordering Information: See Page 5
•
Weight: 0.006 grams (approximate)
Maximum Ratings – MOSFET, Q1 @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
50
V
Gate-Source Voltage
VGSS
±12
V
Drain Current (Note 1)
Continuous
ID
160
mA
Pulsed Drain Current (Note 1)
IDM
560
mA
Maximum Ratings - NPN Transistor, Q2 @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
100
mA
Thermal Characteristics, Total Device @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 1)
PD
250
mW
Thermal Resistance, Junction to Ambient (Note 1)
RθJA
500
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
SOT-363
TOP VIEW
Internal Schematic
TOP VIEW
ESD protected gate up to 2kV
E
D
2
S
2
Q
1
G
2
Q
2
B
C
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