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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2DB1689-7 датащи(PDF) 1 Page - Diodes Incorporated |
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2DB1689-7 датащи(HTML) 1 Page - Diodes Incorporated |
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1 / 4 page  2DB1689 Document number: DS31639 Rev. 2 - 2 1 of 4 www.diodes.com December 2008 © Diodes Incorporated 2DB1689 LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Low Collector-Emitter Saturation Voltage • Ideal for Low Power Amplification and Switching • Complementary NPN Type Available (2DD2652) • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 1) • "Green Device" (Note 2) Mechanical Data • Case: SOT-323 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals: Finish ⎯ Matte Tin annealed over Alloy42 leadframe. Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.006 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -15 V Collector-Emitter Voltage VCEO -12 V Emitter-Base Voltage VEBO -6 V Collector Current - Continuous IC -1.5 A Peak Pulse Collector Current ICM -3 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) @ TA = 25°C PD 300 mW Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C RθJA 417 °C/W Power Dissipation (Note 4) @ TA = 25°C PD 500 mW Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C RθJA 250 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Conditions OFF CHARACTERISTICS Collector-Base Breakdown Voltage V(BR)CBO -15 ⎯ ⎯ V IC = -10μA, IE = 0 Collector-Emitter Breakdown Voltage (Note 5) V(BR)CEO -12 ⎯ ⎯ V IC = -1mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -6 ⎯ ⎯ V IE = -10μA, IC = 0 Collector Cut-Off Current ICBO ⎯ ⎯ -0.1 μA VCB = -15V, IE = 0 Emitter Cut-Off Current IEBO ⎯ ⎯ -0.1 μA VEB = -6V, IC = 0 ON CHARACTERISTICS (Note 5) Collector-Emitter Saturation Voltage VCE(SAT) ⎯ -110 -200 mV IC = -500mA, IB = -25mA DC Current Gain hFE 270 ⎯ 680 ⎯ VCE = -2V, IC = -200mA SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo ⎯ 8.5 ⎯ pF VCB = -10V, IE = 0, f = 1MHz Current Gain-Bandwidth Product fT ⎯ 300 ⎯ MHz VCE = -2V, IC = -100mA, f = 100MHz Notes: 1. No purposefully added lead. 2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB with minimum recommended pad layout. 4. Device mounted on FR-4 PCB with 1 inch 2 copper pad layout. 5. Measured under pulsed conditions. Pulse width = 300 μs. Duty cycle ≤2%. Top View Device Schematic E B C Please click here to visit our online spice models database. |
Аналогичный номер детали - 2DB1689-7 |
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Аналогичное описание - 2DB1689-7 |
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