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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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DMN3052LSS датащи(PDF) 1 Page - Diodes Incorporated |
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DMN3052LSS датащи(HTML) 1 Page - Diodes Incorporated |
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1 / 5 page  DMN3052LSS Document number: DS31583 Rev. 3 - 2 1 of 5 www.diodes.com September 2009 © Diodes Incorporated DMN3052LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance • 30m Ω @ VGS = 10V • 40m Ω @ VGS = 4.5V • 63m Ω @ VGS = 2.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • "Green" Device (Note 4) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SO-8 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals Connections: See Diagram • Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.072 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±12 V Drain Current (Note 1) Steady State TA = 25°C TA = 70°C ID 7.1 5.7 A Pulsed Drain Current (Note 3) IDM 28 A Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 1) PD 2.5 W Thermal Resistance, Junction to Ambient RθJA 50 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS 30 ⎯ ⎯ V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 μA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ⎯ ⎯ ±80 ±800 nA VGS = ±12V, VDS = 0V VGS = ±19V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) 0.62 0.9 1.2 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) ⎯ 24 30 50 30 40 63 m Ω VGS = 10V, ID = 7.1A VGS = 4.5V, ID = 6.4A VGS = 2.5V, ID = 5.0A Forward Transconductance gfs ⎯ 10 ⎯ S VDS = 5V, ID = 5.1A Diode Forward Voltage (Note 5) VSD ⎯ 0.78 1.16 V VGS = 0V, IS = 2.1A DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ 555 ⎯ pF VDS = 5V, VGS = 0V f = 1.0MHz Output Capacitance Coss ⎯ 109 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 82 ⎯ pF Notes: 1. Device mounted on 2 oz copper pad layout with RθJA = 50°C/W. 2. No purposefully added lead. 3. Pulse width ≤10μS, Duty Cycle ≤1%. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Short duration pulse test used to minimize self-heating effect. SO-8 TOP VIEW Internal Schematic TOP VIEW S D D G D D S S Please click here to visit our online spice models database. |
Аналогичный номер детали - DMN3052LSS |
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Аналогичное описание - DMN3052LSS |
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