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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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DMN32D2LDF датащи(PDF) 1 Page - Diodes Incorporated |
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DMN32D2LDF датащи(HTML) 1 Page - Diodes Incorporated |
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1 / 4 page  DMN32D2LDF COMMON SOURCE DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Common Source Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.2V max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Small Surface Mount Package • ESD Protected Gate • Lead Free By Design/RoHS Compliant (Note 2) • "Green" Device (Note 3) • Qualified to AEC-Q 101 Standards for High Reliability Mechanical Data • Case: SOT-353 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminal Connections: See Diagram • Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.006 grams (approximate) G 1 D 1 G 2 D 2 S Q1 Q 2 G2 SG1 D2 D1 SOT-353 ESD PROTECTED TOP VIEW BOTTOM VIEW Schematic Diagram TOP VIEW Maximum Ratings Q1, Q2 @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±10 V Drain Current (Note 1) ID 400 mA Thermal Characteristics Q1, Q2 @TA = 25°C unless otherwise specified Total Power Dissipation (Note 1) PD 280 mW Thermal Resistance, Junction to Ambient (Note 1) RθJA 446 °C/W Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C Electrical Characteristics Q1, Q2 @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage BVDSS 30 ⎯ ⎯ V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current @ TC = 25°C IDSS ⎯ ⎯ 1 μA VDS = 30V, VGS = 0V Gate-Body Leakage IGSS ⎯ ⎯ ±10 ±1 μA VGS = ±10V, VDS = 0V VGS = ±5V, VDS = 0V ON CHARACTERISTICS (Note 4) Gate Threshold Voltage VGS(th) 0.6 ⎯ 1.2 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 2.2 1.5 1.2 Ω VGS = 1.8V, ID = 20mA VGS = 2.5V, ID = 20mA VGS = 4.0V, ID = 100mA Forward Transconductance |Yfs| 100 ⎯ ⎯ mS VDS =10V, ID = 0.1A Source-Drain Diode Forward Voltage VSD 0.5 ⎯ 1.4 V VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ 39 ⎯ pF Output Capacitance Coss ⎯ 10 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 3.6 ⎯ pF VDS = 3V, VGS = 0V f = 1.0MHz Turn-on Time ton ⎯ 11 ⎯ nS Switching Time Turn-off Time toff ⎯ 51 ⎯ nS VDD = 5V, ID = 10 mA, VGS = 0-5V Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Short duration pulse test used to minimize self-heating effect. DMN32D2LDF Document number: DS31238 Rev. 3 - 2 1 of 4 www.diodes.com January 2008 © Diodes Incorporated Please click here to visit our online spice models database. |
Аналогичный номер детали - DMN32D2LDF |
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Аналогичное описание - DMN32D2LDF |
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