DXT5401-13 datasheet(2/5 Pages) DIODES

2 / 5 page

DXT5401

Document number: DS31226 Rev. 3 - 2

2 of 5

www.diodes.com

March 2010

DXT5401

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage

V(BR)CBO

-160

⎯

IC = -100μA, IE = 0

Collector-Emitter Breakdown Voltage

V(BR)CEO

-150

⎯

IC = -1.0mA, IB = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

-5.0

⎯

IE = -10μA, IC = 0

Collector Cutoff Current

ICBO

⎯

-50

μA

VCB = -120V, IE = 0

VCB = -120V, IE = 0, TA = 100°C

Emitter Cutoff Current

IEBO

⎯

-50

VEB = -3.0V, IC = 0

ON CHARACTERISTICS (Note 4)

DC Current Gain

hFE

⎯

240

⎯

VCE = -5.0V, IC = -1.0mA

VCE = -5.0V, IC = -10mA

VCE = -5.0V, IC = -50mA

Collector-Emitter Saturation Voltage

VCE(SAT)

⎯

-0.2

-0.5

IC = -10mA, IB = -1.0mA

IC = -50mA, IB = -5.0mA

Base-Emitter Saturation Voltage

VBE(SAT)

⎯

-1.0

IC = -10mA, IB = -1.0mA

IC = -50mA, IB = -5.0mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Cobo

⎯

6.0

VCB = -10V, f = 1.0MHz, IE = 0

Small Signal Current Gain

hfe

200

⎯

VCE = -10V, IC = -1.0mA, f = 1.0kHz

Current Gain-Bandwidth Product

100

300

MHz

VCE = -10V, IC = -10mA, f = 100MHz

Noise Figure

⎯

8.0

VCE = -5.0V, IC = -200μA, RS = 10Ω, f = 1.0kHz

Notes:

4. Measured under pulsed conditions. Pulse width = 300

μs. Duty cycle ≤ 2%.

0.2

0.4

100

125

150

T , AMBIENT TEMPERATURE (°C)

Fig. 1 Power Dissipation

vs. Ambient Temperature (Note 3)

0.6

0.8

1.0

678

, COLLECTOR-EMITTER VOLTAGE (V)

Fig. 2 Typical Collector Current

vs. Collector-Emitter Voltage

100

150

200

250

I = -2mA

I = -4mA

I = -6mA

I = -8mA

I = -10mA

DXT5401-13 датащи(PDF) 2 Page - Diodes Incorporated

DXT5401-13 датащи(HTML) 2 Page - Diodes Incorporated

Html Pages

1 2 3 4 5

датащи скачать

ссылки URL