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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2DB1132P-13 датащи(PDF) 1 Page - Diodes Incorporated |
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2DB1132P-13 датащи(HTML) 1 Page - Diodes Incorporated |
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1 / 4 page  2DB1132P/Q/R PNP SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary NPN Type Available (2DD1664) • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) Mechanical Data • Case: SOT89-3L • Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminals: Finish — Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 • Marking & Type Code Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.072 grams (approximate) SOT89-3L 3 1 2,4 COLLECTOR EMITTER BASE 4 3 2 1 C C B E TOP VIEW Schematic and Pin Configuration Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) @ TA = 25°C PD 1 W Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C RθJA 125 °C/W Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Conditions OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage V(BR)CBO -40 ⎯ ⎯ V IC = -50μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -32 ⎯ ⎯ V IC = -1mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5 ⎯ ⎯ V IE = -50μA, IC = 0 Collector Cut-Off Current ICBO ⎯ ⎯ -0.5 μA VCB = -20V, IE = 0 Emitter Cut-Off Current IEBO ⎯ ⎯ -0.5 μA VEB = -4V, IC = 0 ON CHARACTERISTICS (Note 4) Collector-Emitter Saturation Voltage VCE(SAT) ⎯ -0.125 -0.5 V IC = -500mA, IB = -50mA 82 ⎯ 180 ⎯ 120 ⎯ 270 ⎯ DC Current Gain 2DB1132P 2DB1132Q 2DB1132R hFE 180 ⎯ 390 ⎯ VCE = -3V, IC = -100mA SMALL SIGNAL CHARACTERISTICS Transition Frequency fT ⎯ 190 ⎯ MHz VCE = -5V, IE = 50mA f = 30MHz Output Capacitance Cob ⎯ 12 30 pF VCB = -10V, IE = 0, f = 1MHz Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 4. Measured under pulsed conditions. Pulse width = 300 μs. Duty cycle ≤2%. DS31142 Rev. 4 - 2 1 of 4 www.diodes.com 2DB1132P/Q/R © Diodes Incorporated |
Аналогичный номер детали - 2DB1132P-13 |
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Аналогичное описание - 2DB1132P-13 |
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