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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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DMN5L06DMK датащи(PDF) 1 Page - Diodes Incorporated |
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DMN5L06DMK датащи(HTML) 1 Page - Diodes Incorporated |
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1 / 4 page  DMN5L06DMK Document number: DS30927 Rev. 4 - 2 1 of 4 www.diodes.com September 2007 © Diodes Incorporated DMN5L06DMK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage (1.0V max) • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected up to 2kV • "Green" Device (Note 4) • Qualified to AEC-Q101 standards for High Reliability Mechanical Data • Case: SOT-26 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminal Connections: See Diagram • Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 4 • Ordering Information: See Page 4 • Weight: 0.015 grams (approximate) S 1 D 1 D 2 S 2 G 1 G 2 SOT-26 ESD protected up 2kV TOP VIEW BOTTOM VIEW Maximum Ratings @TA = 25°C unless otherwise specified Internal Schematic TOP VIEW Characteristic Symbol Value Unit Drain Source Voltage VDSS 50 V Gate-Source Voltage VGSS ±20 V Drain Current (Note 1) Continuous Pulsed (Note 3) ID 305 800 mA Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Total Power Dissipation (Note 1) PD 400 mW Thermal Resistance, Junction to Ambient RθJA 313 °C/W Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS 50 ⎯ ⎯ V VGS = 0V, ID = 10μA Zero Gate Voltage Drain Current @ TC = 25°C IDSS ⎯ ⎯ 60 nA VDS = 50V, VGS = 0V Gate-Body Leakage IGSS ⎯ ⎯ 1 500 50 μA nA nA VGS = ±12V, VDS = 0V VGS = ±10V, VDS = 0V VGS = ±5V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) 0.49 ⎯ 1.0 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 3.0 2.5 2.0 Ω VGS = 1.8V, ID = 50mA VGS = 2.5V, ID = 50mA VGS = 5.0V, ID = 50mA On-State Drain Current ID(ON) 0.5 1.4 ⎯ A VGS = 10V, VDS = 7.5V Forward Transconductance |Yfs| 200 ⎯ ⎯ mS VDS =10V, ID = 0.2A Source-Drain Diode Forward Voltage VSD 0.5 ⎯ 1.4 V VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ ⎯ 50 pF Output Capacitance Coss ⎯ ⎯ 25 pF Reverse Transfer Capacitance Crss ⎯ ⎯ 5.0 pF VDS = 25V, VGS = 0V f = 1.0MHz Notes: 1. Device mounted on FR-4 PCB. 2. No purposefully added lead. 3. Pulse width ≤10μS, Duty Cycle ≤1%. 4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Short duration pulse test used to minimize self-heating effect. |
Аналогичный номер детали - DMN5L06DMK |
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Аналогичное описание - DMN5L06DMK |
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