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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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DDTC123JLP датащи(PDF) 2 Page - Diodes Incorporated |
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DDTC123JLP датащи(HTML) 2 Page - Diodes Incorporated |
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2 / 7 page  DDTCxxxxLP (R1 ≠R2 Series) Document number: DS30755 Rev. 7 - 2 2 of 7 www.diodes.com March 2009 © Diodes Incorporated DDTCxxxxLP (R1 ≠R2 Series) Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic P/N Symbol Min Typ Max Unit Test Condition Off Characteristics (Note 4) Collector-Base Breakdown Voltage V(BR)CBO 50 ⎯ ⎯ V IC = 10μA, IE = 0 Collector-Emitter Breakdown Voltage * V(BR)CEO 50 ⎯ ⎯ V IC = 2mA, IB = 0 Emitter-Base Breakdown Voltage * V(BR)EBO 4.5 ⎯ ⎯ V IE = 50μA, IC = 0 Collector Cutoff Current * ICEX ⎯ ⎯ 0.5 μA VCE = 50V, VEB(OFF) = 3.0V Base Cutoff Current (IBEX) IBL ⎯ ⎯ 0.5 μA VCE = 50V, VEB(OFF) = 3.0V Collector-Base Cut Off Current ICBO ⎯ ⎯ 0.5 μA VCB = 50V, IE = 0 Collector-Emitter Cut Off Current, IO(OFF) ICEO ⎯ ⎯ 0.5 μA VCE = 50V, IB = 0 Emitter-Base Cut Off Current IEBO ⎯ ⎯ 0.5 mA VEB = 5V, IC = 0 Input-Off Voltage VI(OFF) ⎯ ⎯ 0.5 V VCE = 5V, IC = 100μA On Characteristics (Note 4) Base-Emitter Turn-On Voltage* DDTC123JLP VBE(ON) ⎯ ⎯ 0.85 V VCE = 5V, IC = 2mA DDTC143ZLP ⎯ ⎯ 0.85 DDTC114YLP ⎯ ⎯ 0.95 Base-Emitter Saturation Voltage* DDTC123JLP VBE(SAT) ⎯ ⎯ 0.98 V IC = 10mA, IB = 1mA, VCE=5V DDTC143ZLP ⎯ ⎯ 0.998 DDTC114YLP ⎯ ⎯ 0.98 Input-On Voltage VI(ON) 1.1 ⎯ ⎯ V VO = 0.3V, IC = 5mA Input Current DDTC123JLP II ⎯ ⎯ 7.2 mA VI = 5V DDTC143ZLP ⎯ ⎯ 1.5 DDTC114YLP ⎯ ⎯ 7.2 DC Current Gain hFE 50 ⎯ ⎯ ⎯ VCE = 5V, IC = 1mA 70 ⎯ ⎯ ⎯ VCE = 5V, IC = 2mA 125 ⎯ ⎯ ⎯ VCE = 5V, IC = 5mA 150 ⎯ ⎯ ⎯ VCE = 5V, IC = 10mA 180 ⎯ ⎯ ⎯ VCE = 5V, IC = 50mA Collector-Emitter Saturation Voltage VCE(SAT) ⎯ ⎯ 0.15 V IC = 10mA, IB = 1mA ⎯ ⎯ 0.2 V IC = 50mA, IB = 5mA Output On Voltage (Same as VCE(SAT)) VO(ON) ⎯ ⎯ 0.3 IJ = 2.5mA, IO = 50mA Input Resistor +/-30% ΔR1 -30 ⎯ 30 % ⎯ Resistor Ratio Δ (R2/R1) -20 ⎯ -20 % ⎯ Small Signal Characteristics Transition Frequency (gain bandwidth product) fT ⎯ 250 ⎯ MHz VCE = 10V, IE = 5mA, f = 100MHz *Guaranteed by design Notes: 4. Short duration pulse test used to minimize self-heating effect. Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02 Typical Characteristics Curves @TA = 25°C unless otherwise specified 0 50 100 150 200 250 300 0 25 50 75 100 125 150 175 R = 500 C/W θJA ° T , AMBIENT TEMPERATURE ( C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) A ° |
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