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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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DCP52 датащи(PDF) 1 Page - Diodes Incorporated |
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DCP52 датащи(HTML) 1 Page - Diodes Incorporated |
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1 / 4 page  DCP52/-16 DCP52/-16 PNP SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary NPN Type Available (DCP55) • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) Mechanical Data • Case: SOT-223 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminals: Finish − Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Marking & Type Code Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.115 grams (approximate) 2 3 4 1 SOT-223 3 1 2,4 COLLECTOR BASE EMITTER 4 3 2 1 C C B E TOP VIEW Schematic and Pin Configuration Maximum Ratings @T A = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -1.5 A Continuous Collector Current IC -1 A Thermal Characteristics Characteristic Symbol Value Unit 1 (Note 3) Power Dissipation @ TA = 25°C Pd 2 (Note 4) W Operating and Storage Temperature Range Tj,TSTG -55 to +150 °C Thermal Resistance Junction to Ambient Air @ TA = 25°C (Note 3) RθJA 125 °C/W Electrical Characteristics @T A = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Conditions OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage V(BR)CBO -60 ⎯ ⎯ V IC = -100μA, IE = 0A Collector-Emitter Breakdown Voltage V(BR)CEO -60 ⎯ ⎯ V IC = -10mA, IB = 0A Emitter-Base Breakdown Voltage V(BR)EBO -5 ⎯ ⎯ V IE = -10μA, IC = 0A Collector Cut-Off Current ICBO ⎯ ⎯ ⎯ ⎯ -100 -20 nA μA VCB = -30V, IE = 0A VCB = - 30V, IE = 0A, TA = 150°C Emitter Cut-Off Current IEBO ⎯ ⎯ -10 μA VEB = -5V, IC = 0A ON CHARACTERISTICS (Note 5) Collector-Emitter Saturation Voltage VCE(SAT) ⎯ ⎯ -0.5 V IC = -500mA, IB = -50mA Base-Emitter Turn-On Voltage VBE(ON) ⎯ ⎯ -1.0 V IC = -500mA, VCE = -2V hFE 40 25 ⎯ 250 ⎯ IC = -150mA, VCE = -2V IC = -500mA, VCE = -2V DC Current Gain DCP52-16 100 ⎯ 250 ⎯ IC = -150mA, VCE = -2V SMALL SIGNAL CHARACTERISTICS Transition Frequency fT ⎯ 200 ⎯ MHz IC = -50mA, VCE = -5V, f = 100MHz Note: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB pad layout as shown on page 4 or on Diodes, Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 4. Device mounted on Polyimide PCB with a copper area of 1.8cm 2. 5. Measured under pulsed conditions. Pulse width = 300 μs. Duty cycle ≤2% DS30708 Rev. 6 - 2 1 of 4 www.diodes.com DCP52/-16 © Diodes Incorporated |
Аналогичный номер детали - DCP52 |
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Аналогичное описание - DCP52 |
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