BC847BVC datasheet(1/4 Pages) DIODES

номер детали	BC847BVC

подробное описание детали	NPN DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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производитель	DIODES [Diodes Incorporated]

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BC847BVC

Document number: DS30638 Rev. 5 - 2

1 of 4

www.diodes.com

April 2009

BC847BVC

NPN DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

•

Epitaxial Die Construction

•

Ultra-Small Surface Mount Package

•

Lead Free By Design/RoHS Compliant (Note 3)

•

"Green" Device (Note 4)

•

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

•

Case: SOT-563

•

Case Material: Molded Plastic, "Green" Molding Compound. UL

Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020D

•

Terminal Connections: See Diagram

•

Terminals: Finish - Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

•

Marking Information: See Page 2

•

Ordering Information: See Page 2

•

Weight: 0.002 grams (approximate)

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

50

V

Collector-Emitter Voltage

VCEO

45

V

Emitter-Base Voltage

VEBO

6.0

V

Collector Current

IC

100

mA

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 2)

PD

150

mW

Thermal Resistance, Junction to Ambient (Note 2)

RθJA

833

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

(Note 5)

V(BR)CBO

50

—

V

IC = 10μA, IB = 0

Collector-Emitter Breakdown Voltage

(Note 5)

V(BR)CEO

45

—

V

IC = 10mA, IB = 0

Emitter-Base Breakdown Voltage

(Note 5)

V(BR)EBO

6

—

V

IE = 1μA, IC = 0

DC Current Gain

(Note 5)

hFE

200

290

450

—

VCE = 5.0V, IC = 2.0mA

Collector-Emitter Saturation Voltage

(Note 5)

VCE(SAT)

—

100

300

mV

IC = 10mA, IB = 0.5mA

IC = 100mA, IB = 5.0mA

Base-Emitter Saturation Voltage

(Note 5)

VBE(SAT)

—

700

900

—

mV

IC = 10mA, IB = 0.5mA

IC = 100mA, IB = 5.0mA

Base-Emitter Voltage

(Note 5)

VBE

580

—

660

—

700

770

mV

VCE = 5.0V, IC = 2.0mA

VCE = 5.0V, IC = 10mA

Collector-Emitter Cutoff Current

(Note 5)

ICBO

—

15

5.0

nA

µA

VCB = 30V

VCB = 30V, TA = 150°C

Gain Bandwidth Product

fT

100

—

MHz

VCE = 5.0V, IC = 10mA,

f = 100MHz

Output Capacitance

COBO

—

4.5

pF

VCB = 10V, f = 1.0MHz

Noise Figure

NF

—

10

dB

VCE = 5V, RS = 2.0kΩ,

f = 1.0kHz, BW = 200Hz

Notes:

1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).

2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

3. No purposefully added lead.

4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php

5. Short duration pulse test used to minimize self-heating effect.

Top View

Bottom View

Device Schematic

C

1

B

2

E2

C2

E1

B1

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