поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

Preview PDF HTML

DDC122LU датащи(PDF) 2 Page - Diodes Incorporated

номер детали DDC122LU
подробное описание детали  NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR
PDF  3 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DDC122LU датащи(HTML) 2 Page - Diodes Incorporated

  DDC122LU Datasheet HTML 1Page - Diodes Incorporated DDC122LU Datasheet HTML 2Page - Diodes Incorporated DDC122LU Datasheet HTML 3Page - Diodes Incorporated  
Zoom Inzoom in Zoom Outzoom out
 2 / 3 page
background image
Electrical Characteristics
@TA = 25°C unless otherwise specified
R1, R2 Types
DS30424 Rev. 6 - 2
2 of 3
www.diodes.com
DDC (LO-R1) U
© Diodes Incorporated
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
DDC122LU
DDC142JU
Vl(off)
0.3
0.3
⎯
⎯
V
VCC = 5V, IO = 100μA
Input Voltage
DDC122LU
DDC142JU
Vl(on)
⎯
⎯
2.0
2.0
V
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 20mA
Output Voltage
VO(on)
⎯
⎯
0.3V
V
IO/Il = 5mA/0.25mA
Input Current
DDC122LU
DDC142JU
Il
⎯
⎯
28
13
mA VI = 5V
Output Current
IO(off)
⎯
⎯
0.5
μA VCC = 50V, VI = 0V
DC Current Gain
DDC122LU
DDC142JU
Gl
56
56
⎯
⎯
⎯
VO = 5V, IO = 10mA
Gain-Bandwidth Product*
fT
⎯
200
⎯
MHz VCE = 10V, IE = 5mA, f = 100MHz
* Transistor - For Reference Only
Electrical Characteristics
@TA = 25°C unless otherwise specified
R1- Only
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
50
⎯
⎯
V
IC = 50μA
Collector-Emitter Breakdown Voltage
BVCEO
40
⎯
⎯
V
IC = 1mA
Emitter-Base Breakdown Voltage
DDC122TU
DDC142TU
BVEBO
5
⎯
⎯
V
IE = 50μA
IE = 50μA
Collector Cutoff Current
ICBO
⎯
⎯
0.5
μA
VCB = 50V
Emitter Cutoff Current
DDC122TU
DDC142TU
IEBO
⎯
⎯
⎯
0.5
0.5
μA
VEB = 4V
Collector-Emitter Saturation Voltage
VCE(sat)
⎯
⎯
0.3
V
IC = 5mA, IB = 0.25mA
DC Current Transfer Ratio
DDC122TU
DDC142TU
hFE
100
100
250
250
600
600
⎯
IC = 1mA, VCE = 5V
Gain-Bandwidth Product*
fT
⎯
200
⎯
MHz VCE = 10V, IE = -5mA, f = 100MHz
* Transistor - For Reference Only
-50
050
100
250
200
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Power Derating Curve
A
°
150
(150mW per element must not be exceeded).



Html Pages

1 2 3


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com