 |
поискавой системы для электроныых деталей |
|
|
поискавой системы для электроныых деталей |
|
BAS40T датащи(PDF) 1 Page - Diodes Incorporated |
|
|
|||||||||||||||||||||||||||||
BAS40T датащи(HTML) 1 Page - Diodes Incorporated |
|
|
1 / 3 page  BAS40T /-04T /-05T /-06T Document number: DS30265 Rev. 13 - 2 1 of 3 www.diodes.com July 2008 © Diodes Incorporated BAS40T /-04T /-05T /-06T SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • Low Forward Voltage Drop • Fast Switching • Ultra-Small Surface Mount Package • PN Junction Guard Ring for Transient and ESD Protection • Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 3, 4 and 5) Mechanical Data • Case: SOT-523 • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals: Solderable per MIL-STD-202, Method 208 • Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). • Polarity: See Diagrams Below • Marking Information: See Page 2 • Ordering Information: See Page 2 • Weight: 0.002 grams (approximate) Top View BAS40T BAS40-04T BAS40-05T BAS40-06T Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 40 V RMS Reverse Voltage VR(RMS) 28 V Forward Continuous Current (Note 1) IFM 200 mA Non-Repetitive Peak Forward Surge Current @ t = 1.0s IFSM 600 mA Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 1) PD 150 mW Thermal Resistance Junction to Ambient (Note 1) RθJA 833 °C/W Operating Temperature Range TJ -55 to +125 °C Storage Temperature Range TSTG -65 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage (Note 2) V(BR)R 40 ⎯ V IR = 10μA Forward Voltage VF ⎯ 380 1000 mV mV IF = 1.0mA, tp < 300μs IF = 40mA, tp < 300μs Leakage Current (Note 2) IR ⎯ 200 nA VR = 30V Total Capacitance CT ⎯ 5.0 pF VR = 0, f = 1.0MHz Reverse Recovery Time trr ⎯ 5.0 ns IF = IR = 10mA, Irr = 0.1 x IR, RL = 100Ω Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration pulse test used to minimize self-heating effect. 3. No purposefully added lead. Halogen and Antimony Free. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Product manufactured with Green Molding Compound and does not contain Halogens or Sb2O3 Fire Retardants. Please click here to visit our online spice models database. |
Аналогичный номер детали - BAS40T |
|
Аналогичное описание - BAS40T |
|
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
