 |
поискавой системы для электроныых деталей |
|
|
поискавой системы для электроныых деталей |
|
BAS70JW датащи(PDF) 1 Page - Diodes Incorporated |
|
|
|||||||||||||||||||||||||||||
BAS70JW датащи(HTML) 1 Page - Diodes Incorporated |
|
|
1 / 3 page  BAS70JW Document number: DS30188 Rev. 13 - 2 1 of 3 www.diodes.com June 2008 © Diodes Incorporated BAS70JW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAY Features • Low Forward Voltage Drop • Fast Switching • Ultra-Small Surface Mount Package • PN Junction Guard Ring for Transient and ESD Protection • Lead Free/RoHS Compliant (Note 3) • "Green" Device (Note 4 and 5) Mechanical Data • Case: SOT-363 • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals: Solderable per MIL-STD-202, Method 208 • Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Please see Ordering Information, Note 7, on Page 2 • Orientation: See Diagram • Marking Information: See Page 2 • Ordering Information: See Page 2 • Weight: 0.006 grams (approximate) C 1 A 2 A 1 C 2 Top View Device Schematic Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 70 V RMS Reverse Voltage VR(RMS) 49 V Forward Continuous Current (Note 1) IFM 70 mA Non-Repetitive Peak Forward Surge Current @ t < 1.0s IFSM 100 mA Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 1) PD 200 mW Thermal Resistance Junction to Ambient Air (Note 1) RθJA 625 °C/W Operating Temperature Range TJ -55 to +125 °C Storage Temperature Range TSTG -65 to +125 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage (Note 2) V(BR)R 70 ⎯ V IR = 10μA Forward Voltage VF ⎯ 410 1000 mV mV tp <300µs, IF = 1.0mA tp <300µs, IF = 15mA Reverse Current (Note 2) IR ⎯ 100 nA tp < 300µs, VR = 50V Total Capacitance CT ⎯ 2.0 pF VR = 0V, f = 1.0MHz Reverse Recovery Time trr ⎯ 5.0 ns IF = IR = 10mA to IR = 1.0mA, Irr = 0.1 x IR, RL = 100Ω Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration pulse test used to minimize self-heating effect. 3. No purposefully added lead. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. Please click here to visit our online spice models database. |
Аналогичный номер детали - BAS70JW |
|
Аналогичное описание - BAS70JW |
|
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
