MMST3904_2 datasheet(2/4 Pages) DIODES

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DS30082 Rev. 11 - 2

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MMST3904

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 5)

Collector-Base Breakdown Voltage

V(BR)CBO

⎯

IC = 10μA, IE = 0

Collector-Emitter Breakdown Voltage

V(BR)CEO

⎯

IC = 1.0mA, IB = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

5.0

⎯

IE = 10μA, IC = 0

Collector Cutoff Current

ICEX

⎯

VCE = 30V, VEB(OFF) = 3.0V

Base Cutoff Current

IBL

⎯

VCE = 30V, VEB(OFF) = 3.0V

ON CHARACTERISTICS (Note 5)

DC Current Gain

hFE

100

⎯

300

⎯

IC = 100μA, VCE = 1.0V

IC = 1.0mA, VCE = 1.0V

IC = 10mA, VCE = 1.0V

IC = 50mA, VCE = 1.0V

IC = 100mA, VCE = 1.0V

Collector-Emitter Saturation Voltage

VCE(SAT)

⎯

0.25

0.30

IC = 10mA, IB = 1.0mA

IC = 50mA, IB = 5.0mA

Base-Emitter Saturation Voltage

VBE(SAT)

0.65

⎯

0.85

0.95

IC = 10mA, IB = 1.0mA

IC = 50mA, IB = 5.0mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Cobo

⎯

4.0

VCB = 5.0V, f = 1.0MHz, IE = 0

Input Capacitance

Cibo

⎯

8.0

VEB = 0.5V, f = 1.0MHz, IC = 0

Input Impedance

hie

1.0

Voltage Feedback Ratio

hre

0.5

8.0

x 10

-4

Small Signal Current Gain

hfe

100

400

⎯

Output Admittance

hoe

1.0

μS

VCE = 10V, IC = 1.0mA,

f = 1.0MHz

Current Gain-Bandwith Product

300

⎯

MHz

VCE = 20V, IC = 10mA,

f = 100MHz

Noise Figure

⎯

5.0

VCC = 5.0V, IC = 100μA,

RS = 1.0kΩ, f = 1.0MHz

SWITCHING CHARACTERISTICS

Delay Time

⎯

Rise Time

⎯

VCC = 3.0V, IC = 10mA,

VBE(OFF) = -0.5V, IB1 = 1.0mA

Notes:

5. Short duration pulse test used to minimize self-heating effect.

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