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DMN100 датащи(PDF) 1 Page - Diodes Incorporated |
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DMN100 датащи(HTML) 1 Page - Diodes Incorporated |
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1 / 4 page ![]() DMN100 Document number: DS30049 Rev. 7 - 2 1 of 4 www.diodes.com November 2007 © Diodes Incorporated DMN100 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Extremely Low On-Resistance: 170m Ω @ VGS = 4.5V • High Drain Current: 1.1A • Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits • Lead Free By Design/RoHS Compliant (Note 2) • Qualified to AEC-Q101 Standards for High Reliability • ESD Protected Gate • "Green" Device (Note 3) Mechanical Data • Case: SC-59 • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.008 grams (approximate) SC-59 Source Gate Protection Diode Gate Drain D S G TOP VIEW TOP VIEW Equivalent Circuit Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS 30 V Gate-Source Voltage Continuous VGSS ±20 V Drain Current Continuous Pulsed ID 1.1 4.0 A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Total Power Dissipation Pd 500 mW Thermal Resistance, Junction to Ambient RθJA 250 K/W Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C Notes: 1. Pulse width ≤ 300μs, duty cycle ≤ 2%. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. |
Аналогичный номер детали - DMN100 |
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Аналогичное описание - DMN100 |
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