MMBTA13 datasheet(1/3 Pages) DIODES

номер детали	MMBTA13

подробное описание детали	NPN SURFACE MOUNT DARLINGTON TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

производитель	DIODES [Diodes Incorporated]

домашняя страница	http://www.diodes.com

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MMBTA13 / MMBTA14

NPN SURFACE MOUNT DARLINGTON TRANSISTOR

Features

•

Epitaxial Planar Die Construction

•

Complementary PNP Types Available (MMBTA63

/MMBTA64)

•

Ideal for Medium Power Amplification and Switching

•

High Current Gain

•

Lead, Halogen and Antimony Free, RoHS Compliant

"Green" Device (Notes 3 and 4)

•

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

•

Case: SOT-23

•

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020D

•

Terminal Connections: See Diagram

•

Terminals: Solderable per MIL-STD-202, Method 208

•

Lead Free Plating (Matte Tin Finish annealed over Alloy

42 leadframe).

•

MMBTA13 Marking (See Page 3): K2D, K3D

•

MMBTA14 Marking (See Page 3): K3D

•

Ordering & Date Code Information: See Page 3

•

Weight: 0.008 grams (approximate)

SOT-23

Dim

Min

Max

A

0.37

0.51

B

1.20

1.40

C

2.30

2.50

D

0.89

1.03

E

0.45

0.60

G

1.78

2.05

H

2.80

3.00

J

0.013

0.10

K

0.903

1.10

L

0.45

0.61

M

0.085

0.180

α

0

°

8

°

All Dimensions in mm

A

E

J

L

TOP VIEW

M

B

C

BE

H

G

D

K

E

B

C

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

30

V

Collector-Emitter Voltage

VCEO

30

V

Emitter-Base Voltage

VEBO

10

V

Collector Current - Continuous

IC

300

mA

Power Dissipation (Note 1)

PD

300

mW

Thermal Resistance, Junction to Ambient (Note 1)

RθJA

417

°CW

Operating and Storage and Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Emitter Breakdown Voltage

V(BR)CEO

30

⎯

V

IC = 100μA VBE = 0V

Collector Cutoff Current

ICBO

⎯

100

nA

VCB = 30V, IE = 0

Emitter Cutoff Current

IEBO

⎯

100

nA

VEB = 10V, IC = 0

ON CHARACTERISTICS (Note 2)

DC Current Gain

MMBTA13

MMBTA14

MMBTA13

MMBTA14

hFE

5,000

10,000

20,000

⎯

IC = 10mA, VCE = 5.0V

IC = 100mA, VCE = 5.0V

Collector-Emitter Saturation Voltage

VCE(SAT)

⎯

1.5

V

IC = 100mA, IB = 100μA

Base-Emitter Saturation Voltage

VBE(SAT)

⎯

2.0

V

IC = 100mA, VCE = 5.0V

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Cobo

8.0 Typical

pF

VCB = 10V, f = 1.0MHz, IE = 0

Input Capacitance

Cibo

15 Typical

pF

VEB = 0.5V, f = 1.0MHz, IC = 0

Current Gain-Bandwidth Product

fT

125

⎯

MHz

VCE = 5.0V, IC = 10mA, f = 100MHz

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2: Short duration pulse test used to minimize self-heating effect.

3. No purposefully added lead. Halogen and Antimony Free.

4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

DS30047 Rev. 11 - 2

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MMBTA13 / MMBTA14

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