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MBRB1545CT датащи(PDF) 2 Page - Diodes Incorporated |
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MBRB1545CT датащи(HTML) 2 Page - Diodes Incorporated |
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2 / 4 page ![]() MBRB1530CT - MBRB1545CT Document number: DS13015 Rev. 6 - 2 2 of 4 www.diodes.com September 2010 © Diodes Incorporated MBRB1530CT - MBRB1545CT Maximum Ratings @TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol MBRB 1530CT MBRB 1535CT MBRB 1540CT MBRB 1545CT Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 30 35 40 45 V RMS Reverse Voltage VR(RMS) 21 24.5 28 31.5 V Average Rectified Output Current @ TC = 105°C IO 15 A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 150 A Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Terminal RθJT 3.0 °C/W Operating and Storage Temperature Range (Note 3) TJ, TSTG -65 to +175 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Forward Voltage, per Element @ IF = 7.5A VFM 0.7 V Voltage Rate of Change dv/dt 10,000 V/µs Peak Reverse Current @ TA = 25°C at Rated DC Blocking Voltage (Note 4) @ TA = 100°C IRM 0.1 15 mA Maximum Reverse Recovery Time (Note 5) trr 30 ns Typical Total Capacitance (Note 6) CT 250 pF Notes: 3. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RθJA 4. 300µs pulse width, 2% duty cycle. 5. Reverse recovery test conditions: IF = 0.5A, IR = 1.0A, Irr = 0.25A (see figure 1). 6. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. 0 4 8 12 16 20 050 100 200 T , CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve C 150 0.1 1.0 10 100 0.2 0.4 0.6 0.8 V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics, per Element F T = 25 C j ο |
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