DMP4050SSS

Document Number DS32108 Rev 1 - 2

2 of 8

www.diodes.com

March 2010

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DMP4050SSS

Characteristic

Symbol

Value

Unit

Drain-Source voltage

-40

V

Gate-Source voltage

(Note 2)

±20

V

Continuous Drain current

(Note 4)

-6.0

A

-4.8

(Note 3)

-4.4

Pulsed Drain current

(Note 5)

-27.0

A

Continuous Source current (Body diode)

(Note 4)

-4.0

A

Pulsed Source current (Body diode)

(Note 5)

-27.0

A

Characteristic

Symbol

Value

Unit

Power dissipation

Linear derating factor

(Note 3)

1.56

12.5

W

mW/

°C

(Note 4)

2.8

22.5

Thermal Resistance, Junction to Ambient

(Note 3)

80

°C/W

(Note 4)

44.5

Thermal Resistance, Junction to Lead

(Note 6)

35

Operating and storage temperature range

-55 to 150

°C

Notes:

3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

4. Same as note (3), except the device is measured at t

≤ 10 sec.

5. Same as note (3), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.

6. Thermal resistance from junction to solder-point (at the end of the drain lead).