DMP4050SSD

Document Number DS32107 Rev 2 - 2

2 of 8

www.diodes.com

November 2010

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DMP4050SSD

Characteristic

Symbol

Value

Unit

Drain-Source voltage

-40

V

Gate-Source voltage

(Note 2)

±20

V

Continuous Drain current

(Notes 4 & 6)

-5.2

A

-4.2

(Notes 3 & 6)

-4.0

Pulsed Drain current

(Notes 5 & 6)

-20.0

A

Continuous Source current (Body diode)

(Notes 4 & 6)

-3.2

A

Pulsed Source current (Body diode)

(Notes 5 & 6)

-20.0

A

Characteristic

Symbol

Value

Unit

Power dissipation

Linear derating factor

(Notes 3 & 6)

1.25

10.0

W

mW/

°C

(Notes 3 & 7)

1.8

14.3

(Notes 4 & 6)

2.14

17.2

Thermal Resistance, Junction to Ambient

(Notes 3 & 6)

100

°C/W

(Notes 3 & 7)

70

(Notes 4 & 6)

58

Thermal Resistance, Junction to Lead

(Notes 6 & 8)

53

Operating and storage temperature range

-55 to 150

°C

Notes:

3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

4. Same as note (3), except the device is measured at t

≤ 10 sec.

5. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.

6. For a dual device with one active die.

7. For a device with two active die running at equal power.

8. Thermal resistance from junction to solder-point (at the end of the drain lead).