G4812SS datasheet(2/6 Pages) DIODES

2 / 6 page

DMG4812SSS

Document number: DS35071 Rev. 2 - 2

2 of 6

www.diodes.com

January 2011

DMG4812SSS

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±12

Continuous Drain Current (Note 4) VGS = 10V

Steady

State

TA = 25°C

TA = 85°C

6.4

Continuous Drain Current (Note 5) VGS = 10V

≤ 10 sec

TA = 25°C

TA = 85°C

10.7

8.6

Continuous Drain Current (Note 5) VGS = 4.5V

≤ 10 sec

TA = 25°C

TA = 85°C

9.6

7.7

Pulsed Drain Current (Note 6)

IDM

Avalanche Current (Notes 6 & 7)

IAR

Repetitive Avalanche Energy (Notes 6 & 7) L = 0.3mH

EAR

25.4

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 4)

1.54

Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4)

RθJA

°C/W

Power Dissipation (Note 5)

2.8

Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5)

RθJA

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics @ TA = 25°C unless otherwise stated

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 1mA

Zero Gate Voltage Drain Current

IDSS

150

μA

VDS = 30V, VGS = 0V

Gate-Source Leakage

IGSS

±100

VGS = ±12V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(th)

1.0

2.3

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS (ON)

Ω

VGS = 10V, ID = 10.7A

16.5

18.5

VGS = 4.5V, ID = 9.6A

Forward Transfer Admittance

|Yfs|

VDS = 5V, ID = 10.7A

Diode Forward Voltage

VSD

0.36

0.5

VGS = 0V, IS = 1A

Maximum Body-Diode + Schottky Continuous Current

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

1849

VDS =15V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

158

Reverse Transfer Capacitance

Crss

123

Gate Resistance

0.54

2.0

4.0

Ω

VDS =0V, VGS = 0V, f = 1MHz

Total Gate Charge VGS = 4.5V

18.5

VDS = 15V, VGS = 10V,

ID = 9.6A

Total Gate Charge VGS = 10V

Gate-Source Charge

Qgs

4.7

Gate-Drain Charge

Qgd

4.0

Turn-On Delay Time

tD(on)

6.62

VGS = 10V, VDS = 15V,

RG = 3Ω, RL = 15Ω, ID = 1A

Turn-On Rise Time

8.73

Turn-Off Delay Time

tD(off)

36.41

Turn-Off Fall Time

4.69

Notes:

4. Device mounted on FR-4 PCB with minimum recommended pad layout. The value in any given application depends on the user’s specific board design.

5. Device mounted on 1” x 1” FR-4 PCB with high coverage 1 oz. Copper, single sided , device is measured at t

≤ 10 sec.

6. Repetitive rating, pulse width limited by junction temperature.

7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

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