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2SC4684 датащи(PDF) 3 Page - Toshiba Semiconductor |
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2SC4684 датащи(HTML) 3 Page - Toshiba Semiconductor |
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3 / 4 page ![]() 2SC4684 2005-02-01 3 Collector-emitter voltage VCE (V) IC – VCE Collector current IC (A) VCE (sat) – IC Collector-emitter voltage VCE (V) Safe Operating Area Base-emitter voltage VBE (V) IC – VBE Collector current IC (A) hFE – IC Collector current IC (A) VBE (sat) – IC Common emitter Tc = 25°C 0 0 10 2 IB = 0.5 mA 4 8 1 2 3 4 5 50 30 5 20 6 6 40 10 2 Common emitter VCE = 2 V 0 0 10 2 Tc = 125°C 4 8 0.2 0.4 0.6 0.8 1.0 25 −40 1.2 6 Common emitter IC/IB = 200 0.01 0.01 0.03 0.1 0.3 1 10 10 3 0.3 0.1 Tc = 125°C −40 25 1 0.03 3 Common emitter IC/IB = 200 0.01 0.01 0.03 0.1 0.3 1 10 10 3 0.3 0.1 Tc = −40°C 125 25 1 0.03 3 Common emitter VCE = 2 V 10 0.01 0.03 0.1 0.3 1 10 10000 3000 300 100 Tc = 125°C −40 25 1000 30 3 *: Single nonrepetitive pulse Tc = 25°C **: Pulse width = 10 ms (max) Duty cycle = 30% (max) Curves must be derated linearly with increase in temperature. 0.1 0.3 IC max (continuous) IC max (pulsed)** DC operation Tc = 25°C 10 30 1 3 0.3 0.5 1 3 5 10 ms* 10 100 ms* 1 ms* VCEO max |
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