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AP8801 датащи(PDF) 4 Page - Diodes Incorporated

номер детали AP8801
подробное описание детали  500mA LED Step-down Converter
PDF  11 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

AP8801 датащи(HTML) 4 Page - Diodes Incorporated

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AP8801
500mA LED Step-down Converter
AP8801 Rev. 4
4 of 11
DECEMBER 2009
DS31765
www.diodes.com
© Diodes Incorporated
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
VIN
VIN pin voltage
-0.3~50
V
VSW
SW voltage
-0.3~50
V
TJ
Junction Temperature
150
oC
TLEAD
Lead Temperature Soldering
300
oC
TST
Storage Temperature Range
-65 to +150
oC
Caution:
The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not
be exceeded under any condition.
Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken
when handling and transporting these devices
Recommended Operating Conditions
Symbol
Parameter
Min
Max
Unit
TA
Ambient Temperature Range
-40
105
ºC
Duty Cycle
Using Inductor
≥ 100µH (Note 3)
0.1
0.95
Notes:
3. For most applications the LED current will be within 8% over the duty cycle range specified. Duty cycle accuracy is also dependent on
propagation delay. Smaller size inductors can be used but LED current accuracy may be greater than 8% at extremes of duty cycle. This is
most noticeable at low duty cycles (less than 0.1) or when the input voltage is high and only one LED is being driven.
Electrical Characteristics
(VIN =24V, TA=25
oC, unless otherwise specified)
Symbol
Parameter
Conditions
Min
Typ.
Max
Unit
VIN
Operating Input Voltage
8.0
-
48
V
IOUT
Continuous switch current
(Note 4)
500
mA
IQ
Quiescent Current
-
78
120
μA
FOSC
Switching Frequency
-
-
0.5
MHz
VTHD
Internal Threshold Voltage
184
200
216
mV
VREF
Internal Reference Voltage
-
1.25
-
V
SET
SET pin input current
VSET=VIN-0.2
-
7
-
μA
Rds(on)
On Resistance of MOSFET
ISW=0.4A
0.7
1.15
ISW Leakage Switch leakage current
-
-
8
μA
EN
Voltage High
ON
1.25
-
-
V
EN
Voltage Low
OFF
-
-
0.2
V
θ
JA
Thermal Resistance
Junction-to-Ambient
SOP-8L (Note 5)
-
88
-
°C/W
MSOP-8L (Note 5)
-
128
-
°C/W
θ
JC
Thermal Resistance
Junction-to-Case
SOP-8L (Note 5)
-
58
-
°C/W
MSOP-8L (Note 5)
-
90
-
°C/W
Notes:
4. Refer to figure 6 for the device derating curve.
5. Test condition for SOP-8L and MSOP-8L: Device mounted on FR-4 PCB, 2”x2”, 2oz copper, minimum recommended pad layout on top layer
and thermal vias to bottom layer ground plane. For better thermal performance, larger copper pad for heat-sink is needed.



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