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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SC4604 датащи(PDF) 1 Page - Toshiba Semiconductor |
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2SC4604 датащи(HTML) 1 Page - Toshiba Semiconductor |
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1 / 4 page  2SC4604 2004-07-26 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4604 Power Amplifier Application. Power Switching Applications. • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) • High-speed switching: tstg = 0.5 µs (typ.) • Complementary to 2SA1761 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V Collector current IC 3 A Base current IB 0.6 A Collector power dissipation PC 900 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 80 V, IE = 0 ― ― 0.1 µA Emitter cut-off current IEBO VEB = 6 V, IC = 0 ― ― 0.1 µA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IE = 0 50 ― ― V hFE (1) VCE = 2 V, IC = 100 mA 120 ― 400 DC current gain hFE (2) VCE = 2 V, IC = 2 A 40 ― ― Collector-emitter saturation voltage VCE (sat) IC = 1.5 A, IB = 75 mA ― ― 0.5 V Base-emitter saturation voltage VBE (sat) IC = 1.5 A, IB = 75 mA ― ― 1.2 V Transition frequency fT VCE = 2 V, IC = 100 mA ― 100 ― MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 20 ― pF Turn-on time ton ― 0.1 ― Storage time tstg ― 0.5 ― Switching time Fall time tf IB1 = −IB2 = 75 mA, duty cycle ≤ 1% ― 0.1 ― µs Unit: mm JEDEC TO-92MOD JEITA ― TOSHIBA 2-5J1A Weight: 0.36 g (typ.) 20 µs 30 V Output IB2 IB1 Input |
Аналогичный номер детали - 2SC4604 |
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Аналогичное описание - 2SC4604 |
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