AP7217C datasheet(4/9 Pages) DIODES

4 / 9 page

AP7217C

1.25V 600mA CMOS LDO

AP7217C Rev. 3

4 of 9

OCTOBER 2009

DS31424

www.diodes.com

Electrical Characteristics

(TA = 25°C, CIN= 1µF, COUT= 1µF, VEN= VIN, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min

Typ.

Max

Unit

Quiescent Current

IO = 0mA

µA

ISTB

Standby Current

VEN = Off

VIN = 5.0V

µA

Output Voltage

Accuracy

IO = 30mA, VIN = 5V

1.225

1.25

1.275

VOUT

VOUT Temperature

Coefficient

-40

°C to 85°C, I

OUT = 30mA

±100

ppm /

IOUT = 100mA, VOUT = 1.25V

1250

VDROPOUT

Dropout Voltage

IOUT = 600mA, VOUT = 1.25V

2000

IOUT

Maximum Output

Current

VIN = 5.3V

600

ILIMIT

Current Limit

VIN = 5.3V

750

ISHORT

Short Circuit Current VIN = 5.3V

∆V

LINE/∆VIN/VOUT Line Regulation

4.3V

≤ V

IN ≤ 5.5V; IOUT = 30mA

0.01

±0.2

%/V

∆V

OUT

Load Regulation

1mA

≤ I

OUT ≤ 100mA, VIN = 5.3V

PSRR

Power Supply

Rejection

VIN = 4.3V+ 0.5Vp-pAC,

IOUT = 50mA

F = 1KHz

VEH

Output ON

1.6

VEL

EN Input Threshold

Output OFF

0.25

IEN

Enable Pin Current

-0.1

0.1

µA

Thermal Resistance

Junction-to-Ambient

SOP-8L-EP (Note 3)

ºC/W

Thermal Resistance

Junction-to-Case

SOP-8L-EP (Note 3)

ºC/W

Notes:

3. Test condition for SOP-8L-EP: Device mounted on 2oz copper, minimum recommended pad layout on top & bottom layer with thermal vias,

double sided FR-4 PCB.

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