AP6015

High Efficiency Step-Down Low Power DC-DC Converter

AP6015 Rev. 3

5 of 18

FEBRUARY 2009

www.diodes.com

Symbol

Parameter

Conditions

Min

Typ.

Max

Unit

Power switch and current limit

P-channel MOSFET on-resistance

200

280

410

m

Ω

-

480

-

P-channel leakage current

-

-

1

μA

N-channel MOSFET on-resistance

200

280

410

m

Ω

-

500

-

N-channel leakage current

-

-

1

μA

P-channel current limit

2.5V

≤V

1200

-

1600

mA

Power good output (see Note 5)

Power good threshold

Feedback voltage falling

88%

92%

94%

V

Power good hysteresis

PG output low voltage

-

-

0.3

V

PG output leakage current

0.01

1

μA

Minimum supply voltage for valid

power good signal

1.2

-

-

V

Oscillator

Oscillator frequency

800

1000

1200

KHz

Output

Adjustable output voltage range

0.8

5.5

V

Reference voltage

0.784

0.8

0.816

V

Fixed output

voltage

(see Note 6)

AP6015-Adj

0mA

≤ I

－3%

-

4%

V

AP6015-1.8V

10mA

≤ I

－3%

-

3%

AP6015-2.5V

0mA

≤ I

－3%

-

4%

10mA

≤ I

－3%

-

3%

AP6015-3.3V

0mA

≤ I

－3%

-

4%

10mA

≤ I

－3%

-

3%

Line regulation

0.3

%/V

Load regulation

0.8

%

η

Efficiency

94

%

Start-up time

0.4

1

4

ms

θ

JA

Thermal Resistance

Junction-to-Ambient

MSOP-10L (Note 7)

161

θ

JC

Thermal Resistance

Junction-to-Case

MSOP-10L (Note 7)

39

Notes:

5. Power good is not valid for the first 100

μs after EN goes high. Please refer to the application section for more information.

6. The output voltage accuracy includes line and load regulation over the full temperature range.

7. Test condition for MSOP-10L: Device mounted on 2oz copper, minimum recommended pad layout on top & bottom layer with thermal vias,

double sided FR-4 PCB