2SC3673 datasheet(1/5 Pages) TOSHIBA

номер детали	2SC3673

подробное описание детали	Switching Applications Solenoid Drive Applications

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производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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2SC3673

2004-07-26

1

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC3673

Switching Applications

Solenoid Drive Applications

• High DC current gain: hFE = 500 (min) (IC = 400 mA)

• Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max)

(IC = 300 mA)

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

40

V

Collector-emitter voltage

VCEO

40

V

Emitter-base voltage

VEBO

7

V

Collector current

IC

2

A

Base current

IB

0.5

A

Collector power dissipation

PC

1000

mW

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 40 V, IE = 0

―

10

µA

Emitter cut-off current

IEBO

VEB = 7 V, IC = 0

―

1

µA

Collector-emitter breakdown voltage

V (BR) CEO

IC = 10 mA, IB = 0

40

―

V

DC current gain

hFE

VCE = 1 V, IC = 400 mA

500

―

Collector-emitter saturation voltage

VCE (sat)

IC = 300 mA, IB = 1 mA

―

0.3

0.5

V

Base-emitter saturation voltage

VBE (sat)

IC = 300 mA, IB = 1 mA

―

1.1

V

Transition frequency

fT

VCE = 2 V, IC = 100 mA

―

220

―

MHz

Collector output capacitance

Cob

VCB = 10 V, IB = 0, f = 1 MHz

―

20

―

pF

Turn-on time

ton

―

1.0

―

Storage time

tstg

―

3.0

―

Switching time

Fall time

tf

IB1 = −IB2 = 1 mA, duty cycle ≤ 1%

―

1.2

―

µs

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-7D101A

Weight: 0.2 g (typ.)

20 µs

VCC = 30 V

Output

IB2

IB1

Input

Аналогичный номер детали - 2SC3673

производитель	номер детали	датащи	подробное описание детали
Toshiba Semiconductor	2SC3673	200Kb / 3P	NPN EPITAXIAL TYPE (SWITCHING, SOLENOID DRIVE APPLICATIONS)

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