| поискавой системы для электроныых деталей |
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2SC3670 датащи(PDF) 1 Page - Toshiba Semiconductor |
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2SC3670 датащи(HTML) 1 Page - Toshiba Semiconductor |
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1 / 4 page ![]() 2SC3670 2004-07-07 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3670 Strobe Flash Applications Medium Power Amplifier Applications • High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2 A) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V VCES 30 Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 6 V DC IC 2 Collector current Pulsed (Note 1) ICP 5 A Base current IB 0.5 A Collector power dissipation PC 1000 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 30 V, IE = 0 ― ― 100 nA Emitter cut-off current IEBO VEB = 6 V, IC = 0 ― ― 100 nA Collector-emitter breakdown voltage VCEO IC = 10 mA, IB = 0 10 ― ― V Emitter-base breakdown voltage VEBO IC = 1 mA, IC = 0 6 ― ― V hFE (1) (Note 2) VCE = 1 V, IC = 0.5 A 140 ― 600 DC current gain hFE (2) VCE = 1 V, IC = 2 A 70 200 ― Collector-emitter saturation voltage VCE (sat) IC = 2 A, IB = 50 mA ― 0.2 0.5 V Base-emitter voltage VBE VCE = 1 V, IC = 2 A ― 0.86 1.5 V Transition frequency fT VCE = 1 V, IC = 0.5 A ― 150 ― MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 27 ― pF Note 2: hFE (1) classification A: 140 to 240, B: 200 to 330, C: 300 to 450, D: 420 to 600 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-7D101A Weight: 0.2 g (typ.) |
Аналогичный номер детали - 2SC3670 |
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Аналогичное описание - 2SC3670 |
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